公开(公告)号：US20250149305A1

公开(公告)日：2025-05-08

申请号：US18386721

申请日：2023-11-03

Applicant: Applied Materials, Inc.

Inventor： Tianshu LI ,  Yikai CHEN ,  Aniruddha PAL ,  Yao-Hung YANG ,  Saurabh M. CHAUDHARI

IPC: H01J37/32 ,  C23C16/32

Abstract: A method for forming a part for a process chamber incorporates a substrate core in the part. The method may include performing a silicon carbide (SIC) deposition process on a substrate to form a SiC coating of approximately 1 mm to approximately 2 mm on all sides of the substrate to form a composite SiC structure where the substrate is composed of a stack of a plurality of substrates each with a thickness of approximately 1 mm to approximately 2 mm and separating the stack of the plurality of substrates of the composite SiC structure to form multiple composite structures where each multiple composite structure has an SiC coating on a top surface and on all side surfaces and a bottom surface of exposed substrate material.