公开(公告)号：US20240313079A1

公开(公告)日：2024-09-19

申请号：US18185242

申请日：2023-03-16

Applicant: Applied Materials, Inc.

Inventor： Sefa Dag ,  El Mehdi Bazizi ,  Gaurav Thareja ,  Avgerinos V. Gelatos ,  Gang Shen

IPC: H01L29/45 ,  H01L21/285

CPC classification number: H01L29/45 ,  H01L21/28518

Abstract: The present technology includes semiconductor devices and methods with improved contact resistivity. Semiconductor devices include a substrate base, a silicon oxide disposed on the base defining one or more features, a bi-metallic silicide layer disposed on the substrate in the one or more features, and at least a first metal layer. The bi-metallic silicide layer includes a first metal, a second metal different than the first metal, and a silicon containing compound, and includes greater than or about 0.8 E+14 per cm−2 second metal atoms. The first metal layer includes the first metal and overlies the bi-metallic silicide layer.