公开(公告)号：US20240130117A1

公开(公告)日：2024-04-18

申请号：US18481163

申请日：2023-10-04

Applicant: Applied Materials, Inc.

Inventor： Sipeng GU ,  Liang HONG ,  Jun-Feng LU

IPC: H10B12/00

CPC classification number: H10B12/485 ,  H10B12/02

Abstract: Disclosed herein are approaches for forming dynamic DRAM devices without trench fill voids. A method may include providing a plurality of trenches in a substrate, the plurality of trenches defining a plurality of device structures, and depositing a plurality of layers over the device structures. The layers may include a first layer over the device structures, a second layer over the first layer, and a third layer over the second layer. The method may further include forming a plurality of contact trenches through the plurality of layers to expose one or more device structures of the plurality of device structures, and directing ions into a sidewall of the trenches at a non-zero angle, wherein the ions impact the third layer without impacting the second layer. The method may further include forming a fill material within the trenches after the ions are directed into the sidewall of the trenches.