3D MEMORY CELL ARRAY WORD LINE CONNECT AREA

    公开(公告)号:US20250133730A1

    公开(公告)日:2025-04-24

    申请号:US18919189

    申请日:2024-10-17

    Abstract: This specification describes technologies for creating and coupling word lines of a 3D memory cell array to corresponding word lines of a word line connect area. One aspect is a method that includes positioning a memory cell array on a substrate adjacent to a word line connect area, the word line connect area comprising a plurality of layers, the plurality of layers alternating between a first material and a second material; replacing at least a portion of the layers of the first material with a third material; and replacing at least a portion of the layers of the second material with a fourth material, wherein the fourth material forms word lines within the word line connect area and is electrically coupled to memory cell word lines within the memory cell array.

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