公开(公告)号：US11488812B2

公开(公告)日：2022-11-01

申请号：US16438277

申请日：2019-06-11

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Andrew Nguyen ,  Changhun Lee ,  Xiaoming He ,  Meihua Shen

IPC: H01J37/32

Abstract: In-situ low pressure chamber cleans and gas nozzle apparatus for plasma processing systems employing in-situ deposited chamber coatings. Certain chamber clean embodiments for conductor etch applications include an NF3-based plasma clean performed at pressures below 30 mT to remove in-situ deposited SiOx coatings from interior surfaces of a gas nozzle hole. Embodiments include a gas nozzle with bottom holes dimensioned sufficiently small to reduce or prevent the in-situ deposited chamber coatings from building up a SiOx deposits on interior surfaces of a nozzle hole.

公开(公告)号：US20190295826A1

公开(公告)日：2019-09-26

申请号：US16438277

申请日：2019-06-11

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Andrew Nguyen ,  Changhun Lee ,  Xiaoming He ,  Meihua Shen

IPC: H01J37/32

Abstract: In-situ low pressure chamber cleans and gas nozzle apparatus for plasma processing systems employing in-situ deposited chamber coatings. Certain chamber clean embodiments for conductor etch applications include an NF3-based plasma clean performed at pressures below 30 mT to remove in-situ deposited SiOx coatings from interior surfaces of a gas nozzle hole. Embodiments include a gas nozzle with bottom holes dimensioned sufficiently small to reduce or prevent the in-situ deposited chamber coatings from building up a SiOx deposits on interior surfaces of a nozzle hole.