公开(公告)号：US20250115697A1

公开(公告)日：2025-04-10

申请号：US18483352

申请日：2023-10-09

Applicant: Applied Materials, Inc.

Inventor： Xinyi Lu ,  SeyedMahmoud Hosseini ,  Sudhakar Madhusoodhanan ,  Srikant Pathak

IPC: C08F222/10 ,  B24D18/00 ,  B33Y10/00 ,  B33Y70/00 ,  C08F2/50

Abstract: Printable resin precursor compositions and polishing articles including printable resin precursors are provided. Printable resin precursors include a curable precursor formulation having a viscosity of less than or about 15 cP at 70° which include at least one urethane acrylate oligomer, at least one reactive monomer, and a photoinitiator. The curable precursor formulation exhibits an ultimate tensile strength measured in mPa and an elongation at break (%), where a product of the ultimate tensile strength and the elongation at break is greater than or about 2,000.

公开(公告)号：US20250115698A1

公开(公告)日：2025-04-10

申请号：US18483363

申请日：2023-10-09

Applicant: Applied Materials, Inc.

Inventor： Xinyi Lu ,  SeyedMahmoud Hosseini ,  Sudhakar Madhusoodhanan ,  Srikant Pathak

IPC: C08F222/10 ,  B24D18/00 ,  B33Y10/00 ,  B33Y70/00 ,  C08F2/50

Abstract: Printable resin precursor compositions and polishing articles including printable resin precursors are provided. Printable resin precursors include a curable precursor formulation having a viscosity of less than or about 15 cP at 70° which include at least one urethane acrylate oligomer, at least one reactive monomer, and a photoinitiator. The curable precursor formulation exhibits an ultimate tensile strength measured in mPa and an elongation at break (%), where a product of the ultimate tensile strength and the elongation at break is greater than or about 2,000.

公开(公告)号：US20250112038A1

公开(公告)日：2025-04-03

申请号：US18376287

申请日：2023-10-03

Applicant: Applied Materials, Inc.

Inventor： Shanshan Yao ,  Xinyi Lu ,  Bo Xie ,  Chi-I Lang ,  Li-Qun Xia

IPC: H01L21/02

Abstract: Exemplary semiconductor processing methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-carbon-and-nitrogen-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a layer of silicon-carbon-and-nitrogen-containing material on the substrate. The layer of silicon-carbon-and-nitrogen-containing material may be characterized by a dielectric constant of less than or about 4.0. The layer of silicon-carbon-and-nitrogen-containing material may be characterized by a leakage current at 2 MV/cm of less than or about 3E-08 A/cm2.