摘要:
A power amplifier includes an input network, output stages, coupled in parallel and configured to output power optimally in corresponding power-ranges, the output stages coupled to the input network, an output impedance matching network, coupled to the output stages and not containing a switching element, and a bias-control network, coupled between the output impedance matching network, the input network, and the output stages. In some amplifiers the output impedance matching network does not contain a switching element corresponding to the output stage configured to output power in the highest range. In other amplifiers the bias-control network is configured to isolate output stages by providing a hard shut-off to transistors of the isolated output stages.
摘要:
A power amplifier includes an input network, output stages, coupled in parallel and configured to output power optimally in corresponding power-ranges, the output stages coupled to the input network, an output impedance matching network, coupled to the output stages and not containing a switching element, and a bias-control network, coupled between the output impedance matching network, the input network, and the output stages. In some amplifiers the output impedance matching network does not contain a switching element corresponding to the output stage configured to output power in the highest range. In other amplifiers the bias-control network is configured to isolate output stages by providing a hard shut-off to transistors of the isolated output stages.
摘要:
A voltage regulator integrated with a monolithic microwave integrated circuit (MMIC) power amplifier that supplies a regulated bias current to the MMIC power amplifier that is compensated for temperature and voltage supply variations. The regulator circuit includes HBT transistors for current mirrors and a voltage regulator where a base-emitter voltage drop compensates for a similar base emitter drop in the current mirrors. The regulator circuit is designed to maintain constant the bias voltage and mirror currents with changes in Vcc and temperature. The compensated constant bias current to the MMIC power amplifier maintains uniform operating parameters for the power amplifier.
摘要:
A voltage regulator integrated with a monolithic microwave integrated circuit (MMIC) power amplifier that supplies a regulated bias current to the MMIC power amplifier that is compensated for temperature and voltage supply variations. The regulator circuit includes HBT transistors for current mirrors and a voltage regulator where a base-emitter voltage drop compensates for a similar base emitter drop in the current mirrors. The regulator circuit is designed to maintain constant the bias voltage and mirror currents with changes in Vcc and temperature. The compensated constant bias current to the MMIC power amplifier maintains uniform operating parameters for the power amplifier.
摘要:
A switch element includes a switch device having a drain, a source and a plurality of gates, and at least one additional interconnect located between the plurality of gates, the additional interconnect operative to establish a constant potential between the at least two gates.
摘要:
A switch element includes a switch device having a drain, a source and a plurality of gates, and at least one additional interconnect located between the plurality of gates, the additional interconnect operative to establish a constant potential between the at least two gates.
摘要:
A switch element includes a switch device having a drain, a source and a plurality of gates, and at least one additional interconnect located between the plurality of gates, the additional interconnect operative to establish a constant potential between the at least two gates.
摘要:
A switch element includes a switch device having a drain, a source and a plurality of gates, and at least one additional interconnect located between the plurality of gates, the additional interconnect operative to establish a constant potential between the at least two gates.
摘要:
According to one exemplary embodiment, a low harmonic switching device includes a first switching block including a first multi-gate FET, where the first switching block is coupled to a first input and a shared output of the low harmonic switching device. A first capacitor is coupled between a first gate and a source of the first multi-gate FET and a second capacitor is coupled between a second gate and a drain of the first multi-gate FET so as to cause a reduction in a harmonic amplitude in the shared output. A resistor can couple the source to the drain of the first multi-gate FET. The first switching block can further include a second multi-gate FET, where a source of the second multi-gate FET is coupled to the drain of the first multi-gate FET and a drain of the second multi-gate FET is coupled to the shared output.
摘要:
According to one exemplary embodiment, a low harmonic switching device includes a first switching block including a first multi-gate FET, where the first switching block is coupled to a first input and a shared output of the low harmonic switching device. A first capacitor is coupled between a first gate and a source of the first multi-gate FET and a second capacitor is coupled between a second gate and a drain of the first multi-gate FET so as to cause a reduction in a harmonic amplitude in the shared output. A resistor can couple the source to the drain of the first multi-gate FET. The first switching block can further include a second multi-gate FET, where a source of the second multi-gate FET is coupled to the drain of the first multi-gate FET and a drain of the second multi-gate FET is coupled to the shared output.