公开(公告)号：US20100013521A1

公开(公告)日：2010-01-21

申请号：US12527589

申请日：2008-03-28

申请人： Atsuo Mizuma ,  Masashi Aiba

发明人： Atsuo Mizuma ,  Masashi Aiba

IPC分类号： H03B21/00

CPC分类号： H03F1/0288 ,  H01P5/12 ,  H03F2200/451

摘要： A synthesizer is constructed by constituting a first λ/4 line of a first strip line and by constituting a second λ/4 line of a second strip line, so that it is formed into a chip shape (or a chip part) in a dielectric substrate. A first shield electrode is formed on the upper face of the dielectric substrate, and a second shield electrode is formed on the lower face of the dielectric substrate, so that the first λ/4 line and the second λ/4 line are formed between the first shield electrode and the second shield electrode.

摘要翻译： 通过构成第一带状线的第一λ/ 4线并通过构成第二带状线的第二λ/ 4线来构成合成器，从而在电介质中形成芯片形状（或芯片部分） 基质。 第一屏蔽电极形成在电介质基板的上表面上，并且第二屏蔽电极形成在电介质基板的下表面上，从而在第一屏蔽电极之间形成第一λ/ 4线和第二λ/ 第一屏蔽电极和第二屏蔽电极。