公开(公告)号：US20200057520A1

公开(公告)日：2020-02-20

申请号：US16260108

申请日：2019-01-29

Applicant: Au Optronics Corporation

Inventor： Chun-Cheng Hung ,  Wen-Jen Li ,  Yen-Shih Huang ,  Chia-Ming Chen ,  Ting-Wei Ko ,  Chia-Yuan Yeh

IPC: G06F3/041 ,  G06F3/044 ,  H01L51/52 ,  H01L27/32

Abstract: An anti-reflective integrated touch display panel includes an anti-reflective structure and touch electrodes. The anti-reflective structure includes a first insulating layer, a second insulating layer disposed on the first insulating layer, a conducting layer disposed on the second insulating layer, a third insulating layer disposed on the second insulating layer, and a fourth insulating layer disposed on the third insulating layer. The first insulating layer includes silicon oxide or silicon nitride, and has a thickness of 0.1 to 2 micrometers. The second insulating layer includes silicon oxide or strontium oxide, and has a thickness of 0.001 to 0.1 micrometer. The conducting layer includes molybdenum, and has a thickness of 0.01 to 0.05 micrometer. The fourth insulating layer includes silicon nitride, and has a thickness of 0.001 to 0.3 micrometer. The touch electrodes are disposed between the third insulating layer and the fourth insulating layer.

公开(公告)号：US10705639B2

公开(公告)日：2020-07-07

申请号：US16260108

申请日：2019-01-29

Applicant: Au Optronics Corporation

Inventor： Chun-Cheng Hung ,  Wen-Jen Li ,  Yen-Shih Huang ,  Chia-Ming Chen ,  Ting-Wei Ko ,  Chia-Yuan Yeh

IPC: G06F3/044 ,  G06F3/041 ,  H01L27/32 ,  H01L51/52

Abstract: An anti-reflective integrated touch display panel includes an anti-reflective structure and touch electrodes. The anti-reflective structure includes a first insulating layer, a second insulating layer disposed on the first insulating layer, a conducting layer disposed on the second insulating layer, a third insulating layer disposed on the second insulating layer, and a fourth insulating layer disposed on the third insulating layer. The first insulating layer includes silicon oxide or silicon nitride, and has a thickness of 0.1 to 2 micrometers. The second insulating layer includes silicon oxide or strontium oxide, and has a thickness of 0.001 to 0.1 micrometer. The conducting layer includes molybdenum, and has a thickness of 0.01 to 0.05 micrometer. The fourth insulating layer includes silicon nitride, and has a thickness of 0.001 to 0.3 micrometer. The touch electrodes are disposed between the third insulating layer and the fourth insulating layer.