公开(公告)号：US20200227618A1

公开(公告)日：2020-07-16

申请号：US16247234

申请日：2019-01-14

申请人： Auburn University

发明人： Michael C. HAMILTON ,  Vaibhav GUPTA ,  Mark Lee ADAMS

IPC分类号： H01L39/24 ,  H01L39/02

摘要： One or more dielectric barriers, such as, but not limited to, aluminum oxide (Al2O3), is used to isolate and protect super conductive (SC) structures. The SC structures are formed from SC materials, such as, but not limited to, niobium, from other surrounding materials. Using the barriers significantly reduces and/or eliminates the degradation of the superconducting properties of the SC structures during subsequent fabrication steps that employ elevated temperatures. As a result, incorporation of the barriers relaxes the need to use lower temperature fabrication processes and opens up possibilities for use of different more desirable processes and/or materials during subsequent fabrication steps.