公开(公告)号：US20200105360A1

公开(公告)日：2020-04-02

申请号：US16146650

申请日：2018-09-28

Applicant: BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Inventor： DAVID D. MOSER ,  MICHAEL J. FRACK, JR. ,  JASON F. ROSS ,  KEVIN LINGER

IPC: G11C29/32 ,  G11C7/22 ,  G11C7/10

Abstract: A scannable-latch random access memory (SLRAM) is disclosed. The SLRAM includes two rows of memory cells. The SLRAM includes a functional data input, a scan data input, a first and second functional data outputs, a scan data output, and a scan enable. The functional data input is connected to a first memory cell in a first and second rows of memory cells. The scan data input is connected to the first memory cell in the first or second row of memory cells. The first and second functional data outputs are connected to a last memory cell in the first and second row of memory cells, respectively. The scan data output is connected to the last memory cell in the first or second row of memory cells. The scan enable allows data to be output from the scan data output or the first and second functional data outputs.