公开(公告)号：US20240413105A1

公开(公告)日：2024-12-12

申请号：US18206730

申请日：2023-06-07

Applicant: BAE SYSTEMS Information and Electronic Systems Integration Inc.

Inventor： Nathaniel P. Wyckoff ,  Benjamin Terry ,  Alexander S. Warren ,  Joseph Waggoner

IPC: H01L23/00

Abstract: A microelectronics device structure includes a device having (i) a lower surface, (ii) an upper surface opposite the lower surface, and (iii) a side surface extending between the lower surface and the upper surface. The integrated circuit structure further includes a conductive line having (i) a first section on the upper surface, (ii) a second section on the side surface, and (iii) a third section on the lower surface. In an example, the first section and the second section of the conductive line is a monolithic conductive structure, with no seam or interface between the first section and the second section. Additionally or alternatively, in an example, the second section and the third section of the conductive line is a monolithic conductive structure, with no seam or interface between the second section and the third section.