公开(公告)号：US20190218660A1

公开(公告)日：2019-07-18

申请号：US16366392

申请日：2019-03-27

申请人： BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

发明人： Hua YE ,  Qiang JIA ,  Yue XU ,  Bingxuan JIANG ,  Jue HOU ,  Pu SHI ,  Jinguo ZHENG ,  Lingbei ZONG ,  Mengxin ZHAO ,  Peijun DING ,  Hougong WANG

IPC分类号： C23C14/56 ,  F26B3/30 ,  F26B5/04

CPC分类号： C23C14/564 ,  C23C14/56 ,  F26B3/30 ,  F26B5/042 ,  H01L21/02063 ,  H01L21/67 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53238

摘要： The present disclosure provides a degassing method, a degassing chamber, and a semiconductor processing apparatus. The degassing method includes heating a degassing chamber to provide an internal temperature at a preset temperature, and maintaining the internal temperature of the degassing chamber at the preset temperature; and transferring substrates to be degassed into the degassing chamber and heating the substrates for a preset period of time, and taking the substrates out after the preset period of time of the heating. The disclosed degassing method is able to improve the temperature uniformity not only for a same batch of substrates but also for different batches of substrates. In addition, the disclosed degassing method can also realize anytime instant loading/unloading of the substrates to be degassed, thereby increasing the productivity of the equipment.