公开(公告)号：US09520420B2

公开(公告)日：2016-12-13

申请号：US14402532

申请日：2013-12-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zheng Liu ,  Jangsoon Im ,  Zuqiang Wang

IPC: H01L27/12

CPC classification number: H01L27/1274 ,  H01L27/1255 ,  H01L27/1262

Abstract: The present invention provides a method for manufacturing an array substrate, an array substrate, and a display device. The method for manufacturing an array substrate, including a step of forming a thin film transistor and a storage capacitor on a substrate, the thin film transistor including a gate, a source, and a drain, and the storage capacitor including a first pole plate and a second pole plate, wherein, arranging the source, the drain, and the first pole plate in a single layer through implanting dopant ions into an amorphous silicon layer formed on the substrate by one ion-implantation process, and through crystallizing an amorphous silicon material forming the amorphous silicon layer and activating the dopant ions by a laser irradiation process. Accordingly, process steps are simplified and a process cost is reduced greatly, and the performances of the array substrate and the display device are increased.

Abstract translation: 本发明提供一种阵列基板，阵列基板和显示装置的制造方法。 制造阵列基板的方法，包括在基板上形成薄膜晶体管和存储电容的步骤，所述薄膜晶体管包括栅极，源极和漏极，所述存储电容器包括第一极板和 第二极板，其中，通过一个离子注入工艺将源极，漏极和第一极板设置在单层中，通过将掺杂剂离子注入到形成在衬底上的非晶硅层中，并且通过使非晶硅材料结晶 形成非晶硅层并通过激光照射工艺激活掺杂剂离子。 因此，简化了处理步骤，并且大大降低了处理成本，并且增加了阵列基板和显示装置的性能。