公开(公告)号：US20180062101A1

公开(公告)日：2018-03-01

申请号：US15508663

申请日：2016-08-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanzhou LI ,  Chungchun LEE ,  Zhuo CHEN ,  Yuanming Zhang

IPC: H01L51/50 ,  H01L27/32 ,  H01L51/56 ,  H01L21/82 ,  B05D1/00

Abstract: A quantum dot light-emitting diode substrate having a bonding layer and a method of preparing the same are provided. The quantum dot light-emitting diode substrate comprising a plurality of sub-pixel light-emitting regions (115), wherein each of the sub-pixel light-emitting regions comprises a light-emitting layer (114) comprising a bonding layer (106) and a quantum dot (103) bonded to the bonding layer. The quantum dot light-emitting diode substrate can be prepared with high resolution by a convenient process, and is suitable for mass production.