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公开(公告)号:US20220392968A1
公开(公告)日:2022-12-08
申请号:US17769765
申请日:2021-06-04
Applicant: BOE Technology Group Co., Ltd.
Inventor: Xiaoyun LIU , Liangliang KANG , Xiaohu LI , Juan ZHANG , Qingyu HUANG , Huajie YAN , Zhiqiang JIAO , Jiaqi WEI
IPC: H01L27/32
Abstract: A display substrate and a display device. The display substrate comprises a base substrate and at least two first electrodes provided on one side of the base substrate and spaced apart; a pixel film layer is provided on the sides of the first electrodes away from the base substrate; a spacing area is formed between the adjacent first electrodes; an isolation recess is formed on the side of the spacing area away from the base substrate; the isolation recess electrically cuts off the pixel film layer on the adjacent first electrodes.
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2.
公开(公告)号:US20250143130A1
公开(公告)日:2025-05-01
申请号:US19009919
申请日:2025-01-04
Applicant: BOE Technology Group Co., Ltd.
Inventor: Xiaoyun LIU , Liangliang KANG , Xiaohu LI , Juan ZHANG , Qingyu HUANG , Huajie YAN , Zhiqiang JIAO , Jiaqi WEI
IPC: H10K59/35
Abstract: A display substrate and a display device. The display substrate comprises a base substrate and at least two first electrodes provided on one side of the base substrate and spaced apart; a pixel film layer is provided on the sides of the first electrodes away from the base substrate; a interval region is formed between the adjacent first electrodes; an isolation groove is formed on the side of the interval region away from the base substrate; the isolation groove electrically cuts off the pixel film layer on the adjacent first electrodes.
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公开(公告)号:US20250107320A1
公开(公告)日:2025-03-27
申请号:US18291235
申请日:2022-09-22
Applicant: BOE Technology Group Co., Ltd.
Inventor: Juan ZHANG , Mengna SUN , Zhiqiang JIAO
IPC: H10K50/805 , H10K50/30 , H10K71/60
Abstract: An organic light-emitting transistor and a preparation method therefor, and a light-emitting panel. The organic light-emitting transistor comprises: a substrate; a gate layer, which is arranged on one side of the substrate; a gate insulating layer, which is arranged on the side of the gate layer that is away from the substrate; a first source electrode, which is arranged on the side of the gate insulating layer that is away from the substrate; a light-emitting functional layer, which is arranged on the side of the first source electrode that is away from the substrate; and a first drain electrode, which is arranged on the side of the light-emitting functional layer that is away from the substrate, wherein the surface of the side of the first source electrode that is away from the substrate is provided with a first grating structure.
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公开(公告)号:US20220077426A1
公开(公告)日:2022-03-10
申请号:US17362819
申请日:2021-06-29
Applicant: BOE Technology Group Co., Ltd.
Inventor: Fudong CHEN , Qingyu HUANG , Juan ZHANG , Zhiqiang JIAO
Abstract: A light-emitting diode includes an anode layer, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode layer which are laminated sequentially. The light-emitting diode meets at least one of the following conditions: a refractive index of the hole transport layer is greater than a refractive index of the light-emitting layer; and a refractive index of the electron transport layer is greater than the refractive index of the light-emitting layer.
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5.
公开(公告)号:US20240397746A1
公开(公告)日:2024-11-28
申请号:US18271249
申请日:2022-02-24
Applicant: BOE Technology Group Co., Ltd.
Inventor: Mengna SUN , Juan ZHANG , Zhiqiang JIAO
IPC: H10K50/30 , H10K50/844 , H10K50/85 , H10K71/60
Abstract: The present disclosure relates to an organic light emitting transistor, a display panel and a display apparatus. At least part of a first micro-nano grating structure is provided on a side of the electron transport layer away from the base substrate, such that at least part of a second micro-nano grating structure is provided on a side of the first electrode away from the base substrate. The first micro-nano grating structure and the second micro-nano grating structure can reduce the wave vector in the waveguide effect plane, thus effectively reducing the wave vector in the plane. When the wave vector in the plane is smaller than the wave vector in the free space, the plasma mode will be excited to convert into an emittable mode, thus effectively extracting the emitted light.
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公开(公告)号:US20240414937A1
公开(公告)日:2024-12-12
申请号:US18700731
申请日:2023-05-11
Applicant: BOE Technology Group Co., Ltd.
Inventor: Peng WANG , Juan ZHANG , Xiaohu LI , Qingyu HUANG , Zhiqiang JIAO
IPC: H10K50/30 , H10K50/805 , H10K71/00 , H10K71/60
Abstract: An organic light-emitting transistor (200), comprising: a gate (214) arranged on a substrate (202), a gate insulation layer (206), a source (204), a light-emitting functional layer (218), and a drain (220). The side surface of the source (204) facing the light-emitting functional layer (218) is in contact with the light-emitting functional layer (218).
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