公开(公告)号：US20130052807A1

公开(公告)日：2013-02-28

申请号：US13663000

申请日：2012-10-29

Applicant: BYD Company Limited

Inventor： Xilin Su ,  Hongpo Hu ,  Chunlin Xie ,  Wang Zhang ,  Qiang Wang

IPC: H01L21/20

CPC classification number: H01L33/382 ,  H01L33/007 ,  H01L2933/0016

Abstract: A semiconductor device comprises a substrate; a conductive layer deposited on a substrate, the conductive layer being patterned to include a first pattern, the first pattern including a major surface and a plurality of grids defined in the major surface, the major surface including first lines and a connecting portion, wherein the connecting portion is connected to an electrode; and an epitaxial layer disposed on the conductive layer, covering the grids and the first line between the adjacent grids.

Abstract translation: 半导体器件包括衬底; 沉积在衬底上的导电层，所述导电层被图案化以包括第一图案，所述第一图案包括主表面和限定在所述主表面中的多个栅格，所述主表面包括第一线和连接部分，其中， 连接部分连接到电极; 以及设置在导电层上的外延层，覆盖相邻网格之间的网格和第一线。

公开(公告)号：US08859315B2

公开(公告)日：2014-10-14

申请号：US13663000

申请日：2012-10-29

Applicant: BYD Company Limited

Inventor： Xilin Su ,  Hongpo Hu ,  Chunlin Xie ,  Wang Zhang ,  Qiang Wang

IPC: H01L21/20 ,  H01L33/38 ,  H01L33/00

CPC classification number: H01L33/382 ,  H01L33/007 ,  H01L2933/0016

Abstract: A semiconductor device comprises a substrate; a conductive layer deposited on a substrate, the conductive layer being patterned to include a first pattern, the first pattern including a major surface and a plurality of grids defined in the major surface, the major surface including first lines and a connecting portion, wherein the connecting portion is connected to an electrode; and an epitaxial layer disposed on the conductive layer, covering the grids and the first line between the adjacent grids.

Abstract translation: 半导体器件包括衬底; 沉积在衬底上的导电层，所述导电层被图案化以包括第一图案，所述第一图案包括主表面和限定在所述主表面中的多个栅格，所述主表面包括第一线和连接部分，其中， 连接部分连接到电极; 以及设置在导电层上的外延层，覆盖相邻网格之间的网格和第一线。