公开(公告)号：US20060118728A1

公开(公告)日：2006-06-08

申请号：US11258464

申请日：2005-10-25

申请人： Bernard Phlips ,  Francis Kub ,  Karl Hobart ,  James Kurfess

发明人： Bernard Phlips ,  Francis Kub ,  Karl Hobart ,  James Kurfess

IPC分类号： G01T1/24

CPC分类号： G01T1/24

摘要： An apparatus and method for operating a direct wafer bonded semiconductor radiation detector includes bonding a plurality of wafers, receiving a radiation signal from a radiation source thereby producing electron and hole pairs via the radiation signal interacting with the detecting device. A voltage source produces a voltage across the direct bonded wafers, thereby drifting the electrons and holes through the plurality of bonded layers. The drifted electrons and/or holes include total drifted charge information of the detector and are collected and processed either at the detector or remote from the detector.

摘要翻译： 用于操作直接晶片接合半导体辐射检测器的装置和方法包括：接合多个晶片，从辐射源接收辐射信号，从而通过与检测装置相互作用的辐射信号产生电子和空穴对。 电压源在直接接合的晶片上产生电压，从而通过多个接合层漂移电子和空穴。 漂移的电子和/或空穴包括检测器的总漂移电荷信息，并且在检测器处或者远离检测器被收集和处理。