公开(公告)号：US4322263A

公开(公告)日：1982-03-30

申请号：US100480

申请日：1979-12-05

申请人： Bosshi Kudo ,  Kazuyoshi Matsuo ,  Takeshi Maki ,  Masamichi Yoshioka

发明人： Bosshi Kudo ,  Kazuyoshi Matsuo ,  Takeshi Maki ,  Masamichi Yoshioka

IPC分类号： C30B15/06 ,  C30B29/64 ,  H01L21/208 ,  C30B15/14

CPC分类号： C30B15/06

摘要： In a method for growing ribbon-like crystal of crystalline substance, a seed crystal is contacted on the upper surface of melt of crystalline substance raised up to the level beyond the upper edge of a crucible, thereafter the contact interface between said seed crystal or a successively growing crystal and the melt (the solid-liquid interface) is cooled under freezing point of said crystalline substance, thereby the crystal is made to successively grow on said solid-liquid interface, while said seed crystal or said successively growing crystal is drawn out substantially in horizontal direction, wherein the circulating convection is made to cause in such a manner that high temperature melt flows underside of said solid-liquid interface, thereby the crystal growth in the direction of depth of the melt is prevented.

摘要翻译： 在用于生长结晶物质的带状晶体的方法中，使晶种在结晶物质的熔体的上表面上接触，升高到超过坩埚的上边缘的高度，然后所述晶种之间的接触界面或 在晶体物质的凝固点下将晶体依次生长并熔融（固液界面）冷却，从而使晶体在所述固 - 液界面上依次生长，同时将所述晶种或连续生长的晶体拉出 基本上在水平方向上，其中使得循环对流使得高温熔融物流过所述固 - 液界面的下侧，从而防止熔体深度方向的晶体生长。

公开(公告)号：US4316764A

公开(公告)日：1982-02-23

申请号：US100541

申请日：1979-12-05

申请人： Bosshi Kudo ,  Masamichi Yoshioka

发明人： Bosshi Kudo ,  Masamichi Yoshioka

IPC分类号： C30B15/06 ,  C30B29/64 ,  H01L21/208 ,  C30B15/14

CPC分类号： C30B15/06

摘要： A method for growing a thin and flat ribbon-like crystal of crystalline substance, wherein a seed crystal is contacted with horizontal free surface of melt of crystalline substance raised up to the level beyond the upper edge of a crucible, thereafter the contact interface between said seed crystal or a successively growing crystal and the melt (the solid-liquid interface) is cooled under freezing point of said crystalline substance, thereby the crystal is made to successively grow on said solid-liquid interface, while said seed crystal and said successively growing crystal is drawn out substantially in horizontal direction, wherein an outwardly projecting eaves-structure is formed on at least a part of an upper peripheral wall of said crucible, said melt of crystalline substance is guided to said eaves-structure, which is then heated, thereby the generation of recrystallization on upper face of the melt contacting with the upper portion of the peripheral wall of the crucible is prevented, and high cooling effect for the solid-liquid interface can be retained as well.

摘要翻译： 一种用于生长结晶物质的薄而扁平的带状晶体的方法，其中晶种与结晶物质熔体的水平自由表面接触，升高至超过坩埚上边缘的水平，此后所述 晶种或连续生长的晶体，并且在所述结晶物质的凝固点下冷却熔体（固 - 液界面），从而使所述晶体在所述固 - 液界面上依次生长，同时所述晶种和所述连续生长 晶体基本上沿水平方向拉出，其中在所述坩埚的上周壁的至少一部分上形成向外突出的檐结构，所述结晶物质的熔体被引导到所述檐结构，然后被加热， 从而预先在与坩埚的周壁的上部接触的熔体的上表面上产生再结晶 也可以保持固体 - 液体界面的高冷却效果。