Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using and in-situ wafer temperature optical probe
    3.
    发明授权
    Correction of wafer temperature drift in a plasma reactor based upon continuous wafer temperature measurements using and in-situ wafer temperature optical probe 有权
    基于使用和原位晶圆温度光学探针的连续晶片温度测量,校正等离子体反应器中的晶片温度漂移

    公开(公告)号:US06353210B1

    公开(公告)日:2002-03-05

    申请号:US09547359

    申请日:2000-04-11

    IPC分类号: H05B100

    摘要: The invention solves the problem of continuously monitoring wafer temperature during processing using an optical or fluoro-optical temperature sensor including an optical fiber having an end next to and facing the backside of the wafer. This optical fiber is accommodated without disturbing plasma processing by providing in one of the wafer lift pins an axial void through which the optical fiber passes. The end of the fiber facing the wafer backside is coincident with the end of the hollow lift pin. The other end is coupled via an “external” optical fiber to temperature probe electronics external of the reactor chamber. The invention uses direct wafer temperature measurements with a test wafer to establish a data base of wafer temperature behavior as a function of coolant pressure and a data base of wafer temperature behavior as a function of wafer support or “puck” temperature. These data bases are then employed during processing of a production wafer to control coolant pressure in such a manner as to minimize wafer temperature deviation from the desired temperature.

    摘要翻译: 本发明解决了使用包括具有接近于晶片背面并且面向晶片的端部的光纤的光学或氟光学温度传感器在处理期间连续监测晶片温度的问题。 通过在一个晶片提升销中提供光纤通过的轴向空隙来容纳该光纤,而不会干扰等离子体处理。 面向晶片背面的纤维的端部与中空提升销的端部重合。 另一端通过“外部”光纤耦合到反应室外的温度探针电子设备。 本发明使用测试晶片直接进行晶片温度测量,以建立作为冷却剂压力的函数的晶片温度特性的数据库和作为晶片支撑或“固定”温度的函数的晶片温度特性的数据库。 然后在生产晶片的处理期间采用这些数据库,以便以最小化晶片温度偏离所需温度的方式来控制冷却剂压力。