公开(公告)号：US07479437B2

公开(公告)日：2009-01-20

申请号：US11413010

申请日：2006-04-28

申请人： Brian J Greene ,  Louis Lu-Chen Hsu ,  Jack Allan Mandelman ,  Chun-Yung Sung

发明人： Brian J Greene ,  Louis Lu-Chen Hsu ,  Jack Allan Mandelman ,  Chun-Yung Sung

IPC分类号： H01L21/336

CPC分类号： H01L29/458 ,  H01L29/66628 ,  H01L29/66772

摘要： A method of reducing contact resistance on a silicon-on-insulator includes exposing sidewalls and a portion of a top surface of a source/drain region of the device, forming a porous silicon layer within a surface of the source/drain region, implanting dopants in the source/drain region, and forming a silicide layer over the source/drain region. The porous silicon layer is formed by forming a layer of p+ doping on the exposed sidewalls and portion of the top surface of the source/drain region, forming a nitride liner over the device, including the source/drain region and the layer of p+ doping, forming a planarized resist over the nitride liner, recessing the planarized resist and etching the nitride liner to expose portions of the source/drain region, and forming the porous silicon layer on the exposed portions of the source drain region.

摘要翻译： 降低绝缘体上硅的接触电阻的方法包括暴露该器件源极/漏极区的侧壁和一部分上表面，在源/漏区的表面内形成多孔硅层，注入掺杂剂 在源极/漏极区域中，并且在源极/漏极区域上形成硅化物层。 通过在暴露的源极/漏极区域的顶表面的侧壁和部分上形成p +掺杂层形成多孔硅层，在器件上形成氮化物衬垫，包括源/漏区和p +掺杂层 在所述氮化物衬垫上形成平坦化的抗蚀剂，使所述平坦化抗蚀剂凹陷并蚀刻所述氮化物衬垫以暴露所述源/漏区的部分，以及在所述源漏区的所述暴露部分上形成所述多孔硅层。