公开(公告)号：US20080164466A1

公开(公告)日：2008-07-10

申请号：US11971566

申请日：2008-01-09

申请人： Brian Rioux ,  Jean-Paul Noel

发明人： Brian Rioux ,  Jean-Paul Noel

IPC分类号： H01L33/00

CPC分类号： C09K9/02

摘要： The present invention relates to a sol-gel deposition/heat treatment process, which consistently produces polycrystalline direct bandgap semiconductor, e.g. ZnO, thin films exhibiting a photo luminescent (PL) spectrum at room temperature that is dominated by a single peak, e.g. in the ultraviolet part of the spectrum, in which the PL intensity of the bandgap emission is more than approximately 40 times greater than any deep-level defect emission peak or band. The present invention incorporates such direct bandgap semiconductor, e.g. ZnO, polycrystalline thin films produced by the method of the present invention into electro-luminescent devices that exhibit similarly high ratios of bandgap/deep-level defect emission intensity.

摘要翻译： 本发明涉及溶胶 - 凝胶沉积/热处理工艺，其一贯地生产多晶直接带隙半导体，例如， ZnO，在室温下表现出由单峰主导的光致发光（PL）光谱的薄膜，例如， 在光谱的紫外线部分，其中带隙发射的PL强度大于任何深层缺陷发射峰或带的大约40倍。 本发明包括这样的直接带隙半导体。 ZnO，通过本发明的方法制造的多晶薄膜变成具有相似高带隙/深层缺陷发射强度比的电致发光器件。