Process For Making Copper Tungsten And Copper Molybdenum Composite Electronic Packaging Materials
    2.
    发明申请
    Process For Making Copper Tungsten And Copper Molybdenum Composite Electronic Packaging Materials 有权
    制备铜钨钼复合电子包装材料的工艺

    公开(公告)号:US20100092327A1

    公开(公告)日:2010-04-15

    申请号:US12249527

    申请日:2008-10-10

    IPC分类号: B22F3/24

    摘要: From tungsten or molybdenum powders, a tungsten or molybdenum compact is pressurized and molded into the same dimensions as or slightly larger than the end product and sintered into tungsten or molybdenum skeleton. After copper infiltration, chemical copper etching is applied to remove excess surface copper. A machining allowance with an absolute value >0-≦0.1 mm may be applied for the machining of uneven surfaces resulting from the chemical process of copper removal.

    摘要翻译: 钨或钼粉末由钨或钼粉末加压制成与最终产品相同的尺寸或稍大于烧结成钨或钼骨架的尺寸。 铜渗透后,应用化学铜蚀刻去除多余的表面铜。 绝对值> 0-≦̸ 0.1mm的加工余量可用于加工由铜除去的化学过程产生的不平坦表面。

    Process for making copper tungsten and copper molybdenum composite electronic packaging materials
    3.
    发明授权
    Process for making copper tungsten and copper molybdenum composite electronic packaging materials 有权
    制作铜钨铜铜复合电子封装材料的工艺

    公开(公告)号:US08048366B2

    公开(公告)日:2011-11-01

    申请号:US12249527

    申请日:2008-10-10

    IPC分类号: B22F3/26

    摘要: From tungsten or molybdenum powders, a tungsten or molybdenum compact is pressurized and molded into the same dimensions as or slightly larger than the end product and sintered into tungsten or molybdenum skeleton. After copper infiltration, chemical copper etching is applied to remove excess surface copper. A machining allowance with an absolute value >0-≦0.1 mm may be applied for the machining of uneven surfaces resulting from the chemical process of copper removal.

    摘要翻译: 钨或钼粉末由钨或钼粉末加压制成与最终产品相同的尺寸或稍大于烧结成钨或钼骨架的尺寸。 铜渗透后,应用化学铜蚀刻去除多余的表面铜。 绝对值> 0-≦̸ 0.1mm的加工余量可用于加工由铜除去的化学过程产生的不平坦表面。