公开(公告)号：US20220271525A1

公开(公告)日：2022-08-25

申请号：US17539621

申请日：2021-12-01

Applicant: CHAO-CHENG LU

Inventor： CHAO-CHENG LU

IPC: H02H3/087 ,  H02M1/32

Abstract: The method for using semiconductor intelligence line of the invention, which is to set the semiconductor intelligence line on the drain source voltage axis of the first semiconductor output characteristic, has a gate voltage setting, which indicates the function of limiting the application limit of the drain source current on the output characteristic.

公开(公告)号：US20220337053A1

公开(公告)日：2022-10-20

申请号：US17395741

申请日：2021-08-06

Applicant: CHAO-CHENG LU

Inventor： CHAO-CHENG LU

IPC: H02H9/02 ,  H02H9/04

Abstract: The electronic circuit protector of the invention comprises a first semiconductor, a second semiconductor, a third semiconductor, a first diode, a second diode, a first resistor, a second resistor and a third resistor, constituting an application circuit with load overload or short circuit protection function, which avoids the damage caused by overload or short circuit at both terminals of the load.