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公开(公告)号：US11508177B2
公开(公告)日：2022-11-22
申请号：US16633014
申请日：2019-06-25
发明人： Guangdong Wang , Yiming Wang , Zhenyu Wang , Chen Wang
摘要： A display panel, a manufacturing method thereof and a display device are provided. The display panel includes: a photosensitive sensor; a light shield layer disposed on a sensing side of the photosensitive sensor and including at least one first opening and at least one second opening, the first opening and the photosensitive sensor are overlapped with each other in a direction perpendicular to a surface of the display panel, so that light running through the first opening is irradiated to the photosensitive sensor; and an optical processing film disposed in a region of the light shield layer close to the second opening and on at least a portion of a surface of the light shield layer away from the photosensitive sensor, and a light reflectivity of the optical processing film is less than a light reflectivity of the light shield layer.
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公开(公告)号：US10768530B2
公开(公告)日：2020-09-08
申请号：US16342905
申请日：2018-07-19
发明人： Kefang Wu , Wei Zhou , Jiarong Xu , Yunwei Li , Chaogun Wang , Zhenyu Wang , Yuandan Chen
摘要： A developing apparatus includes a developing mechanism and a heating mechanism, and the heating mechanism includes a plurality of heating units. The plurality of heating units are provided above or below the developing mechanism, and each heating unit of the plurality of heating units is disposed independently.
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公开(公告)号：US12125859B2
公开(公告)日：2024-10-22
申请号：US17908418
申请日：2021-08-31
发明人： Xiangmi Zhan , Zhenyu Wang , Yifan Yang , Zhi Ding , Xuecheng Hou
IPC分类号： H01L27/146 , G01T1/20
CPC分类号： H01L27/14616 , G01T1/2018 , H01L27/14636 , H01L27/14659 , H01L27/14689 , H01L27/14692
摘要： The present disclosure provides a detection substrate, including: a base substrate, detection pixel units arranged in an array on the base substrate, where each detection pixel unit includes: a thin film transistor and a photoelectric conversion part located on a side of the thin film transistor, and a bias voltage line is arranged on a side of the photoelectric conversion part. The thin film transistor includes: an active layer, a first electrode and a second electrode, and the active layer including a channel region. At least one dielectric layer is provided between the photoelectric conversion part and the bias voltage line, and is formed with a first via hole therein, and at least part of an orthographic projection of the channel region on the base substrate is located within an orthographic projection of the first via hole on the base substrate. A flat panel detector is further provided.
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公开(公告)号：US11614551B2
公开(公告)日：2023-03-28
申请号：US17351566
申请日：2021-06-18
发明人： Jianxing Shang , Xuecheng Hou , Zhenyu Wang , Ziran Liu , Chuang Yong
IPC分类号： G01T1/24 , G01N23/083 , H01L27/146
摘要： The present disclosure provides a detection substrate, a manufacturing method thereof and a ray detector. The detection substrate includes: a base substrate; a plurality of independent first electrodes arranged on the base substrate on the same layer; a photoelectric conversion layer arranged on a whole face of sides, facing away from the base substrate, of the plurality of first electrodes; a ray absorption layer arranged on a side, facing away from the plurality of first electrodes, of the photoelectric conversion layer, wherein an orthographic projection of the ray absorption layer on the base substrate is overlapped with an orthographic projection of gaps between the first electrodes on the base substrate; and a second electrode arranged on a whole face of a side, facing away from the plurality of first electrodes, of the photoelectric conversion layer.
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