公开(公告)号：US3831110A

公开(公告)日：1974-08-20

申请号：US24927472

申请日：1972-05-01

Applicant: CORNELL RES FOUNDATION INC

Inventor： EASTMAN L

IPC: H03B9/14 ,  H03B7/14

CPC classification number: H03B9/145 ,  H03B9/141

Abstract: Multi-axis resonant cavities are provided in which a microwave semiconductor oscillator, e.g., an L.S.A. diode, operates in a below cut off mode with respect to the propagation characteristics of the cavity. An output coaxial transmission line extending into the cavity is radially spaced from the semiconductor and couples energy to a load by means of mutual inductance. In one arrangement, a flat circular cavity is formed in a block of electrically conductive material with a microwave semiconductor coaxially mounted at the center of the cavity having one face in electrical contact with a wave trap through which DC bias voltage is applied. The transmission line is offcenter, adjacent to the semiconductor. In a modification of this arrangement, the floor of the circular cavity forms a truncated cone and the side wall comprises a spherical section. The angle of the conical floor is used to determine the cavity inductance. A flat elliptical cavity is described in one arrangement wherein the semiconductor and the transmission line are located respectively at the two foci of the ellipse. The elliptical cavity forms a resonator as well as a means of coupling out energy. Other arrangements of the circular cavity are described in which a plurality of semiconductors are located symmetrically in the cavity. In another system a semiconductor is located at the center of a partial circular cavity connected to a ridge wave guide having a coaxial transmission line displaced from the semiconductor extending through the ridge. A special low impedence slug in the output line of a multi-axis cavity is designed to load the fundamental frequency of oscillation of the diode and reduce the loading at the second harmonic, thereby producing more power at the fundamental frequency. Varactor-tuned Gunn oscillator and Gunn effect amplifier embodiments are also presented.

Abstract translation: 提供了多轴谐振腔，其中微波半导体振荡器，例如L.S.A。 二极管，相对于空腔的传播特性，在低于截止模式的情况下工作。 延伸到空腔中的输出同轴传输线与半导体径向间隔开，并且通过互感将能量耦合到负载。 在一种布置中，在导电材料块中形成平坦的圆形空腔，其中微波半导体同轴地安装在空腔的中心，该微波半导体的一个面与施加了直流偏置电压的波陷阱电接触。 传输线偏离中心，与半导体相邻。 在这种配置的变型中，圆形腔的底板形成一个截锥体，而该侧壁包括一个球形部分。 锥形地板的角度用于确定腔电感。 在一个布置中描述了平坦的椭圆形腔，其中半导体和传输线分别位于椭圆的两个焦点处。 椭圆形腔形成谐振器以及耦合出能量的手段。 描述了圆形腔的其它布置，其中多个半导体对称地位于空腔中。 在另一个系统中，半导体位于连接到具有从延伸穿过脊的半导体的同轴传输线的脊波导的部分圆形腔的中心。 多轴腔输出线路中的特殊低阻抗芯片设计用于加载二极管的基波频率，并减少二次谐波的负载，从而在基波频率下产生更多的功率。 还提出了Varactor调谐的Gunn振荡器和Gunn效应放大器实施例。