公开(公告)号：US20170067155A1

公开(公告)日：2017-03-09

申请号：US14847050

申请日：2015-09-08

Applicant: CPFilms Inc.

Inventor： Jaime Antonio Li ,  Coby Lee Hubbard ,  David Lee Richardson

IPC: C23C16/448 ,  C23C16/54 ,  C23C14/56

CPC classification number: C23C14/562 ,  C23C14/243 ,  C23C14/5833 ,  H01J37/32522

Abstract: A vapor deposition device and a method for depositing a coating on a substrate are disclosed. The device includes a heating chamber for containing plasma and an evaporant chamber for containing an evaporant source. Evaporant is generated by heating of the evaporant source by the plasma. The heating chamber is both separated from the evaporant chamber and in thermally conductive connectivity with the evaporant chamber. The method includes supplying plasma to a heating chamber; heating an evaporant source by transfer of heat from the plasma to in an amount sufficient to generate evaporant from the evaporant source; and condensing the evaporant or a reaction product thereof on a surface of the substrate to form a coating thereon. The plasma is maintained in isolation from the evaporant source and the evaporant.

Abstract translation: 公开了一种气相沉积装置和一种在衬底上沉积涂层的方法。 该装置包括用于容纳等离子体的加热室和用于容纳蒸发源的蒸发室。 通过等离子体对蒸发源的加热产生蒸发。 加热室与蒸发室分离，与蒸发室的导热连接。 该方法包括向加热室供应等离子体; 通过将热量从等离子体转移到足以从蒸发源产生蒸发剂的量来加热蒸发源; 并将蒸发剂或其反应产物在基材的表面上冷凝以在其上形成涂层。 等离子体与蒸发源和蒸发器隔离。