公开(公告)号：US20210122701A1

公开(公告)日：2021-04-29

申请号：US17142751

申请日：2021-01-06

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Robert H. Grubbs ,  Alexey Federov ,  Anton Toutov ,  Kerry N. Betz

IPC: C07C209/28 ,  C07C37/50 ,  C07C1/22 ,  C07F7/08 ,  C07C37/055 ,  C07C209/62 ,  C07C319/06

Abstract: The present disclosure describes methods for silylating aromatic organic substrates, and associated chemical systems, said methods comprising or consisting essentially of contacting the aromatic organic substrate with a mixture of (a) at least one organosilane and (b) at least one strong base, under conditions sufficient to silylate the aromatic substrate.

公开(公告)号：US11230520B2

公开(公告)日：2022-01-25

申请号：US17142751

申请日：2021-01-06

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Robert H. Grubbs ,  Alexey Fedorov ,  Anton Toutov ,  Kerry N. Betz

IPC: C07C209/28 ,  C07C209/62 ,  C07C37/50 ,  C07C37/055 ,  C07C1/22 ,  C07C319/06 ,  C07F7/08

Abstract: The present disclosure describes methods for silylating aromatic organic substrates, and associated chemical systems, said methods comprising or consisting essentially of contacting the aromatic organic substrate with a mixture of (a) at least one organosilane and (b) at least one strong base, under conditions sufficient to silylate the aromatic substrate.

公开(公告)号：US10927065B2

公开(公告)日：2021-02-23

申请号：US15889295

申请日：2018-02-06

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Robert H. Grubbs ,  Alexey Fedorov ,  Anton Toutov ,  Kerry N. Betz

IPC: C07C209/28 ,  C07C209/62 ,  C07C1/22 ,  C07C37/055 ,  C07C319/06 ,  C07C37/50 ,  C07F7/08

Abstract: The present disclosure describes methods for silylating aromatic organic substrates, and associated chemical systems, said methods comprising or consisting essentially of contacting the aromatic organic substrate with a mixture of (a) at least one organosilane and (b) at least one strong base, under conditions sufficient to silylate the aromatic substrate.

公开(公告)号：US20200377528A1

公开(公告)日：2020-12-03

申请号：US16997226

申请日：2020-08-19

Applicant: California Institute Of Technology

Inventor： Anton A. Toutov ,  Kerry N. Betz ,  Andrew M. Romine ,  Robert H. Grubbs

IPC: C07F7/10

Abstract: The present disclosure is directed at methods of forming an N—Si silyl bond, the method comprising contacting an organic substrate comprising an aromatic amine having at least one N—H bond with a mixture comprising of (a) at least one hydrosilane and (b) at least one hydroxide or alkoxide, under conditions sufficient to form the N—Si bond. The disclosure is further directed to the compositions involved in these methods and the products that result therefrom.

公开(公告)号：US20220162236A1

公开(公告)日：2022-05-26

申请号：US17557313

申请日：2021-12-21

Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

Inventor： Robert H. Grubbs ,  Alexey Fedorov ,  Anton Toutov ,  Kerry N. Betz

IPC: C07F7/08 ,  C07C1/22 ,  C07C37/055 ,  C07C37/50 ,  C07C209/28 ,  C07C209/62 ,  C07C319/06

Abstract: The present disclosure describes methods for silylating aromatic organic substrates, and associated chemical systems, said methods comprising or consisting essentially of contacting the aromatic organic substrate with a mixture of (a) at least one organosilane and (b) at least one strong base, under conditions sufficient to silylate the aromatic substrate.

公开(公告)号：US20210363164A1

公开(公告)日：2021-11-25

申请号：US17378960

申请日：2021-07-19

Applicant: California Institute Of Technology

Inventor： Anton A. Toutov ,  Kerry N. Betz ,  Andrew M. Romine ,  Robert H. Grubbs

IPC: C07F7/18 ,  C07F7/21 ,  C07D235/08 ,  C07F7/08

Abstract: The present disclosure is directed to methods for dehydrogenatively coupled hydrosilanes and alcohols, the methods comprising contacting an organic substrate having at least one organic alcohol moiety with a mixture of at least one hydrosilane and sodium and/or potassium hydroxide, the contacting resulting in the formation of a dehydrogenatively coupled silyl ether. The disclosure further described associated compositions and methods of using the formed products.

公开(公告)号：US20190218232A1

公开(公告)日：2019-07-18

申请号：US16244637

申请日：2019-01-10

Applicant: California Institute Of Technology

Inventor： Anton A. Toutov ,  Kerry N. Betz ,  Andrew M. Romine ,  Robert H. Grubbs

IPC: C07F7/10

CPC classification number: C07F7/10

Abstract: The present disclosure is directed at methods of forming an N—Si silyl bond, the method comprising contacting an organic substrate comprising an aromatic amine having at least one N—H bond with a mixture comprising of (a) at least one hydrosilane or hydrosiloxane and (b) at least one hydroxide or alkoxide, under conditions sufficient to form the N—Si bond. The disclosure is further directed to the compositions involved in these methods and the products that result therefrom.

公开(公告)号：US11773116B2

公开(公告)日：2023-10-03

申请号：US17192129

申请日：2021-03-04

Applicant: California Institute Of Technology

Inventor： Anton A. Toutov ,  Kerry N. Betz ,  Andrew M. Romine ,  Robert H. Grubbs

IPC: C07F7/10

CPC classification number: C07F7/10

Abstract: The present disclosure is directed to hydrosilyl amines and fluorosilyl amines and methods of making the same.

公开(公告)号：US20210198291A1

公开(公告)日：2021-07-01

申请号：US17192129

申请日：2021-03-04

Applicant: California Institute Of Technology

Inventor： Anton A. Toutov ,  Kerry N. Betz ,  Andrew M. Romine ,  Robert H. Grubbs

IPC: C07F7/10

Abstract: The present disclosure is directed to hydrosilyl amines and fluorosilyl amines and methods of making the same.

公开(公告)号：US10995105B2

公开(公告)日：2021-05-04

申请号：US16997226

申请日：2020-08-19

Applicant: California Institute Of Technology

Inventor： Anton A. Toutov ,  Kerry N. Betz ,  Andrew M. Romine ,  Robert H. Grubbs

IPC: C07F7/10

Abstract: The present disclosure is directed at methods of forming an N—Si silyl bond, the method comprising contacting an organic substrate comprising an aromatic amine having at least one N—H bond with a mixture comprising of (a) at least one hydrosilane and (b) at least one hydroxide or alkoxide, under conditions sufficient to form the N—Si bond. The disclosure is further directed to the compositions involved in these methods and the products that result therefrom.