公开(公告)号：US20060145747A1

公开(公告)日：2006-07-06

申请号：US11028392

申请日：2005-01-03

申请人： Carmelo Ucciardello ,  Rosa Di Mauro ,  Domenico Pappalardo ,  Francesco Sorrentino ,  Giuseppe Maganuco ,  Gaetano Palumbo

发明人： Carmelo Ucciardello ,  Rosa Di Mauro ,  Domenico Pappalardo ,  Francesco Sorrentino ,  Giuseppe Maganuco ,  Gaetano Palumbo

IPC分类号： G05F1/10

CPC分类号： H02M3/073 ,  H02M1/32

摘要： Protecting the devices of a charge pump includes the connection of a high-voltage transistor between the output node of the charge pump and the load being supplied, and in controlling this transistor with a fraction of the output voltage of the charge pump. This control is accomplished by connecting the control node of the high-voltage transistor to a node of connection between two stages of the multi-stage charge pump onto which a fraction of the controlled output voltage of the multi-stage charge pump is produced. The high-voltage output transistor protects the low voltage devices of the multi-stage charge pump, by preventing the controlled output voltage from undergoing excessively abrupt variations, that could damage the transistors of the last stage of the charge pump.

摘要翻译： 保护电荷泵的装置包括在电荷泵的输出节点和所提供负载之间的高电压晶体管的连接，以及以电荷泵的输出电压的一小部分来控制该晶体管。 该控制通过将高压晶体管的控制节点连接到多级电荷泵的两级之间的连接节点来实现，在该节点上产生多级电荷泵的受控输出电压的一部分。 高压输出晶体管通过防止受控的输出电压发生过度的突变而保护多级电荷泵的低电压器件，这可能会损坏电荷泵的最后一级的晶体管。

公开(公告)号：US07256640B2

公开(公告)日：2007-08-14

申请号：US11028392

申请日：2005-01-03

申请人： Carmelo Ucciardello ,  Rosa Di Mauro ,  Domenico Pappalardo ,  Francesco Sorrentino ,  Giuseppe Maganuco ,  Gaetano Palumbo

发明人： Carmelo Ucciardello ,  Rosa Di Mauro ,  Domenico Pappalardo ,  Francesco Sorrentino ,  Giuseppe Maganuco ,  Gaetano Palumbo

IPC分类号： G05F1/10

CPC分类号： H02M3/073 ,  H02M1/32

摘要： Protecting the devices of a charge pump includes the connection of a high-voltage transistor between the output node of the charge pump and the load being supplied, and in controlling this transistor with a fraction of the output voltage of the charge pump. This control is accomplished by connecting the control node of the high-voltage transistor to a node of connection between two stages of the multi-stage charge pump onto which a fraction of the controlled output voltage of the multi-stage charge pump is produced. The high-voltage output transistor protects the low voltage devices of the multi-stage charge pump, by preventing the controlled output voltage from undergoing excessively abrupt variations, that could damage the transistors of the last stage of the charge pump.

摘要翻译： 保护电荷泵的装置包括在电荷泵的输出节点和所提供负载之间的高电压晶体管的连接，以及以电荷泵的输出电压的一小部分来控制该晶体管。 该控制通过将高压晶体管的控制节点连接到多级电荷泵的两级之间的连接节点来实现，在该节点上产生多级电荷泵的受控输出电压的一部分。 高压输出晶体管通过防止受控的输出电压发生过度的突变而保护多级电荷泵的低电压器件，这可能会损坏电荷泵的最后一级的晶体管。

公开(公告)号：US6133621A

公开(公告)日：2000-10-17

申请号：US222643

申请日：1998-12-30

申请人： Maurizio Gaibotti ,  Marco Costanzo ,  Francesco Sorrentino

发明人： Maurizio Gaibotti ,  Marco Costanzo ,  Francesco Sorrentino

IPC分类号： H01L23/522 ,  H01L29/41

CPC分类号： H01L23/5225 ,  H01L2924/0002

摘要： A shielded electrical connection of the integrated type comprises a connection element and a shielding element. The connection element includes a first substantially planar structure of a first conducting material and is placed vertically above and isolated from a semiconductor substrate and which occupies a first flat region. The shielding element includes a second substantially planar structure of a second conducting material and is placed vertically between the first structure and the substrate and which occupies a second flat region. A third substantially planar structure made of a third conducting material is placed vertically above the first structure and which occupies a third flat region. The first region does not extend outside the second and third regions. Furthermore, the second and third structures are connected electrically together and to a reference of potential and are electrically insulated from the first structure and the substrate.

摘要翻译： 集成型的屏蔽电连接包括连接元件和屏蔽元件。 连接元件包括第一导电材料的第一基本上平面的结构，并且垂直地放置在半导体衬底上并与半导体衬底隔离并且占据第一平坦区域。 屏蔽元件包括第二导电材料的第二基本上平面的结构，并且垂直放置在第一结构和基板之间，并占据第二平坦区域。 由第三导电材料制成的第三基本上平面的结构垂直放置在第一结构上方并且占据第三平坦区域。 第一区域不延伸到第二和第三区域之外。 此外，第二和第三结构电连接在一起并作为电位参考，并与第一结构和基板电绝缘。