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公开(公告)号:US07147789B1
公开(公告)日:2006-12-12
申请号:US10662934
申请日:2003-09-15
IPC分类号: B44C1/22
CPC分类号: C23F1/02
摘要: The present invention provides a process for controlling the contour of a feature in a transition area made by etching a substrate. This process includes applying a patterned resist mask to the substrate to form a plurality of mask openings and mask land areas. The mask land areas are sized and spaced to a control the contour of a feature on the substrate.
摘要翻译: 本发明提供了一种用于控制通过蚀刻衬底制成的过渡区域中的特征轮廓的方法。 该方法包括将图案化的抗蚀剂掩模施加到衬底上以形成多个掩模开口和掩模区域。 掩模区域的大小和间隔以控制衬底上的特征的轮廓。