公开(公告)号：US20180294155A1

公开(公告)日：2018-10-11

申请号：US15572059

申请日：2016-05-03

申请人： Centre National De La Recherche Scientifique

发明人： Olivier Soppera ,  Hsiao-Wen Zan ,  Hung-Cheng Lin ,  Chang-Hung Li ,  Fabrice Stehlin ,  Arnaud Spangenberg ,  Fernand Wleder ,  Chung-Chen Yeh

IPC分类号： H01L21/02 ,  G03F7/20 ,  G03F7/16 ,  G03F7/30

摘要： Processes for obtaining a semiconductor nanodevice comprising a substrate, onto which patterned metal-oxide thin films having semiconductor properties are deposited, are provided, as well as semiconductor devices comprising them. The present invention belongs to the field of semiconductor nanodevices.