公开(公告)号：US07186655B2

公开(公告)日：2007-03-06

申请号：US11006187

申请日：2004-12-07

申请人： Chang Gyu Kim ,  Chi Hong Kim ,  Hi Soon Kang ,  Tae Won Lee ,  Kwang Suk Park

发明人： Chang Gyu Kim ,  Chi Hong Kim ,  Hi Soon Kang ,  Tae Won Lee ,  Kwang Suk Park

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  H01L21/31053 ,  H01L21/7684 ,  H01L21/76895

摘要： The disclosure relates to a method for manufacturing a semiconductor device by performing a planarization process including a first CMP process using a slurry including 0.05˜0.5 wt % CeO2 or MnO2 as an abrasive and a second CMP process using a slurry including SiO2 as the other abrasive regardless of order of the processes. The CMP process is performed using the first slurry having a high polishing speed in the middle of the wafer and the second slurry having a high polishing speed at the edge of the wafer, thereby decreasing the processing cost and securing the process margin to secure yield and reliability of devices

摘要翻译： 本公开涉及一种通过执行包括使用包含0.05〜0.5重量％的CeO 2或MnO 2作为研磨剂的浆料的第一CMP工艺的平坦化工艺和使用包含SiO 2作为其它研磨剂的浆料的第二CMP工艺来制造半导体器件的方法 不管进程的顺序。 使用在晶片中间具有高抛光速度的第一浆料和在晶片边缘具有高抛光速度的第二浆料进行CMP处理，从而降低加工成本并确保加工余量以确保产量和 设备的可靠性