公开(公告)号：US07529132B2

公开(公告)日：2009-05-05

申请号：US11762369

申请日：2007-06-13

申请人： Chao Yang Chen ,  Yider Wu ,  Hsiao Hua Lu

发明人： Chao Yang Chen ,  Yider Wu ,  Hsiao Hua Lu

IPC分类号： G11C11/34

CPC分类号： G11C16/0433

摘要： A single-poly non-volatile memory includes a storing node, a control node and a floating gate. While a programming operation is executed, a bit line is provided with a low voltage and a control line is provided with a high voltage so that a coupling voltage occurs in the floating gate. The voltage difference between the floating gate and the storing node is able to send electrons into the floating gate, but the voltage difference between the floating gate and the control node is not enough to expel electrons from the floating gate. While an erasing operation is executed, a bit line is provided with a high voltage and a control line is provided with a low voltage so that a coupling voltage occurs on the floating gate. The voltage difference between the floating gate and the storing node is able to expel electrons from the floating gate, but the voltage difference between the floating gate and the control node is not enough to send electrons into the floating gate.

摘要翻译： 单聚多边形非易失性存储器包括存储节点，控制节点和浮动门。 当执行编程操作时，位线被提供有低电压，并且控制线被提供有高电压，使得在浮动栅极中发生耦合电压。 浮动栅极和存储节点之间的电压差能够将电子发送到浮动栅极，但是浮动栅极和控制节点之间的电压差不足以从浮动栅极排出电子。 当执行擦除操作时，位线被提供有高电压，并且控制线设置有低电压，使得在浮动栅极上发生耦合电压。 浮栅和存储节点之间的电压差能够从浮置栅极排出电子，但是浮栅和控制节点之间的电压差不足以将电子发送到浮置栅极。

公开(公告)号：US20080273399A1

公开(公告)日：2008-11-06

申请号：US11762369

申请日：2007-06-13

申请人： Chao Yang Chen ,  Yider Wu ,  Hsiao Hua Lu

发明人： Chao Yang Chen ,  Yider Wu ,  Hsiao Hua Lu

IPC分类号： G11C16/04

CPC分类号： G11C16/0433

摘要： A single-poly non-volatile memory includes a storing node, a control node and a floating gate. While a programming operation is executed, a bit line is provided with a low voltage and a control line is provided with a high voltage so that a coupling voltage occurs in the floating gate. The voltage difference between the floating gate and the storing node is able to send electrons into the floating gate, but the voltage difference between the floating gate and the control node is not enough to expel electrons from the floating gate. While an erasing operation is executed, a bit line is provided with a high voltage and a control line is provided with a low voltage so that a coupling voltage occurs on the floating gate. The voltage difference between the floating gate and the storing node is able to expel electrons from the floating gate, but the voltage difference between the floating gate and the control node is not enough to send electrons into the floating gate.

摘要翻译： 单聚多边形非易失性存储器包括存储节点，控制节点和浮动门。 当执行编程操作时，位线被提供有低电压，并且控制线被提供有高电压，使得在浮动栅极中发生耦合电压。 浮动栅极和存储节点之间的电压差能够将电子发送到浮动栅极，但是浮动栅极和控制节点之间的电压差不足以从浮动栅极排出电子。 当执行擦除操作时，位线被提供有高电压，并且控制线设置有低电压，使得在浮动栅极上发生耦合电压。 浮栅和存储节点之间的电压差能够从浮置栅极排出电子，但是浮栅和控制节点之间的电压差不足以将电子发送到浮置栅极。