公开(公告)号：US07286627B2

公开(公告)日：2007-10-23

申请号：US11186858

申请日：2005-07-22

申请人： Che-Fu Tsai ,  Wen-Chun Wang ,  Wen-Tui Liao

发明人： Che-Fu Tsai ,  Wen-Chun Wang ,  Wen-Tui Liao

IPC分类号： G11C19/00

CPC分类号： G11C19/28

摘要： A shift register circuit with high stability includes a plurality of stages, each including a supplementary unit for supplementing an output node with low voltage level. The present invention utilizes an output signal of the output node to feed back to a shift register circuit unit and act as a control signal. The control signal controls the shift register circuit unit, and further the output node of the shift register circuit unit is continuously supplemented with low voltage level. Thus, the shift register circuit of the present invention has the function of driving signal shift according to the necessity of active matrix liquid crystal panel. Furthermore, when an amorphous silicon thin film transistor is embodied in the shift register circuit, the present invention restrains the shift phenomena of the threshold voltage of the amorphous silicon thin film transistors and thereby increases the lifetime and stability of the shift register circuit.

公开(公告)号：US20070019775A1

公开(公告)日：2007-01-25

申请号：US11186858

申请日：2005-07-22

申请人： Che-Fu Tsai ,  Wen-Chun Wang ,  Wen-Tui Liao

发明人： Che-Fu Tsai ,  Wen-Chun Wang ,  Wen-Tui Liao

IPC分类号： G11C19/00

CPC分类号： G11C19/28

摘要： A shift register circuit with high stability includes a plurality of stages, each including a supplementary unit for supplementing an output node with low voltage level. The present invention utilizes an output signal of the output node to feed back to a shift register circuit unit and act as a control signal. The control signal controls the shift register circuit unit, and further the output node of the shift register circuit unit is continuously supplemented with low voltage level. Thus, the shift register circuit of the present invention has the function of driving signal shift according to the necessity of active matrix liquid crystal panel. Furthermore, when an amorphous silicon thin film transistor is embodied in the shift register circuit, the present invention restrains the shift phenomena of the threshold voltage of the amorphous silicon thin film transistors and thereby increases the lifetime and stability of the shift register circuit.

摘要翻译： 具有高稳定性的移位寄存器电路包括多个级，每个级包括用于补充具有低电压电平的输出节点的补充单元。 本发明利用输出节点的输出信号反馈到移位寄存器电路单元并用作控制信号。 控制信号控制移位寄存器电路单元，此外，移位寄存器电路单元的输出节点连续补充低电压电平。 因此，本发明的移位寄存器电路具有根据有源矩阵液晶面板的需要驱动信号移位的功能。 此外，当在移位寄存器电路中实现非晶硅薄膜晶体管时，本发明抑制非晶硅薄膜晶体管的阈值电压的偏移现象，从而增加了移位寄存器电路的寿命和稳定性。

公开(公告)号：US07696028B2

公开(公告)日：2010-04-13

申请号：US12128161

申请日：2008-05-28

申请人： Che-Fu Tsai ,  Yi-Lin Chou ,  Wen-Chun Wang

发明人： Che-Fu Tsai ,  Yi-Lin Chou ,  Wen-Chun Wang

IPC分类号： H01L21/336

CPC分类号： G02F1/1362 ,  G02F1/136213 ,  G02F2201/40 ,  H01L27/1255

摘要： A pixel structure of a thin film transistor liquid crystal display employs a design of three metal layers and includes an organic insulating layer between a data signal line and a common electrode for reducing a parasitic capacitance, while a passivation layer included between the common electrode and a pixel electrode acts as a storage capacitor required for the pixels, so as to achieve a high aperture ratio, and the common electrode can act as a shielding bar for enhancing the display contrast.

摘要翻译： 薄膜晶体管液晶显示器的像素结构采用三个金属层的设计，并且包括在数据信号线和公共电极之间的有机绝缘层，用于降低寄生电容，而包括在公共电极和公共电极之间的钝化层 像素电极用作像素所需的存储电容器，以实现高开口率，并且公共电极可以用作增强显示对比度的屏蔽条。

公开(公告)号：US20070178617A1

公开(公告)日：2007-08-02

申请号：US11341464

申请日：2006-01-30

申请人： Che-Fu Tsai ,  Yi-Lin Chou ,  Wen-Chun Wang

发明人： Che-Fu Tsai ,  Yi-Lin Chou ,  Wen-Chun Wang

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： G02F1/1362 ,  G02F1/136213 ,  G02F2201/40 ,  H01L27/1255

摘要： A pixel structure of a thin film transistor liquid crystal display employs a design of three metal layers and includes an organic insulating layer between a data signal line and a common electrode for reducing a parasitic capacitance, while a passivation layer included between the common electrode and a pixel electrode acts as a storage capacitor required for the pixels, so as to achieve a high aperture ratio, and the common electrode can act as a shielding bar for enhancing the display contrast.

摘要翻译： 薄膜晶体管液晶显示器的像素结构采用三个金属层的设计，并且包括在数据信号线和公共电极之间的有机绝缘层，用于减小寄生电容，而包括在公共电极和公共电极之间的钝化层 像素电极用作像素所需的存储电容器，以实现高开口率，并且公共电极可以用作增强显示对比度的屏蔽条。

公开(公告)号：US20070058096A1

公开(公告)日：2007-03-15

申请号：US11223112

申请日：2005-09-12

申请人： Che-Fu Tsai ,  Yi-Lin Chou ,  Wen-Chun Wang

发明人： Che-Fu Tsai ,  Yi-Lin Chou ,  Wen-Chun Wang

IPC分类号： G02F1/1343

CPC分类号： G02F1/136213 ,  G02F2201/40 ,  G09G3/3648 ,  G09G2330/04

摘要： The present invention is a storage capacitor structure for liquid crystal display panels, by using a portion of the pixel electrode formed by the transparent metal layer that is overlapped and corresponding to the common electrode of the second metal layer, which is used as the storage capacitor for the pixel. The common electrode is also used as the second metal layer of the pixel, which shields unnecessary light of the backlight module to raise the contrast ratio of the whole display panel.

摘要翻译： 本发明是一种用于液晶显示面板的存储电容器结构，其通过使用由透明金属层形成的与第二金属层的共用电极重叠并对应的像素电极的一部分，该部分被用作存储电容器 为像素。 公共电极也用作像素的第二金属层，其屏蔽背光模块的不必要的光以提高整个显示面板的对比度。

公开(公告)号：US07592627B2

公开(公告)日：2009-09-22

申请号：US11341464

申请日：2006-01-30

申请人： Che-Fu Tsai ,  Yi-Lin Chou ,  Wen-Chun Wang

发明人： Che-Fu Tsai ,  Yi-Lin Chou ,  Wen-Chun Wang

IPC分类号： H01L27/15

CPC分类号： G02F1/1362 ,  G02F1/136213 ,  G02F2201/40 ,  H01L27/1255

摘要： A pixel structure of a thin film transistor liquid crystal display employs a design of three metal layers and includes an organic insulating layer between a data signal line and a common electrode for reducing a parasitic capacitance, while a passivation layer included between the common electrode and a pixel electrode acts as a storage capacitor required for the pixels, so as to achieve a high aperture ratio, and the common electrode can act as a shielding bar for enhancing the display contrast.

摘要翻译： 薄膜晶体管液晶显示器的像素结构采用三个金属层的设计，并且包括在数据信号线和公共电极之间的有机绝缘层，用于减小寄生电容，而包括在公共电极和公共电极之间的钝化层 像素电极用作像素所需的存储电容器，以实现高开口率，并且公共电极可以用作增强显示对比度的屏蔽条。