-
公开(公告)号：US08852673B2
公开(公告)日：2014-10-07
申请号：US13286451
申请日：2011-11-01
申请人： Che-Rong Laing , Li-Kong Turn , Yung-Yao Lee , Ping-Hsi Yang
发明人： Che-Rong Laing , Li-Kong Turn , Yung-Yao Lee , Ping-Hsi Yang
摘要： Methods for detecting and monitoring defects in a resist material are disclosed. In an example, a method includes forming a resist layer over a substrate; developing the resist layer; washing the developed resist layer with a thinner wash solution, wherein the washing reveals any negatively charged defects in the developed resist layer; and after the washing, inspecting for the negatively charged defects.
摘要翻译： 公开了用于检测和监测抗蚀剂材料中的缺陷的方法。 在一个实例中，一种方法包括在衬底上形成抗蚀剂层; 显影抗蚀层; 用较薄的洗涤溶液洗涤显影的抗蚀剂层，其中洗涤显示显影的抗蚀剂层中的任何带负电荷的缺陷; 洗涤后，检查带负电的缺陷。
-
公开(公告)号：US20130108775A1
公开(公告)日：2013-05-02
申请号：US13286451
申请日：2011-11-01
申请人： Che-Rong Laing , Li-Kong Turn , Yung-Yao Lee , Ping-Hsi Yang
发明人： Che-Rong Laing , Li-Kong Turn , Yung-Yao Lee , Ping-Hsi Yang
IPC分类号： B05D3/10
摘要： Methods for detecting and monitoring defects in a resist material are disclosed. In an example, a method includes forming a resist layer over a substrate; developing the resist layer; washing the developed resist layer with a thinner wash solution, wherein the washing reveals any negatively charged defects in the developed resist layer; and after the washing, inspecting for the negatively charged defects.
摘要翻译： 公开了用于检测和监测抗蚀剂材料中的缺陷的方法。 在一个实例中，一种方法包括在衬底上形成抗蚀剂层; 显影抗蚀层; 用较薄的洗涤溶液洗涤显影的抗蚀剂层，其中洗涤显示显影的抗蚀剂层中的任何带负电荷的缺陷; 洗涤后，检查带负电的缺陷。
-
公开(公告)号：US20120231395A1
公开(公告)日：2012-09-13
申请号：US13044277
申请日：2011-03-09
申请人： Yung-Yao Lee , Wei-Hong Chuang , Li-Shiuan Chen , Ping-Hsi Yang
发明人： Yung-Yao Lee , Wei-Hong Chuang , Li-Shiuan Chen , Ping-Hsi Yang
CPC分类号： G03F7/405 , H01L21/0206
摘要： An iterative rinse for fabrication of semiconductor devices is described. The iterative rinse includes a plurality of rinse cycles, wherein each of the plurality of rinse cycles has a different resistivity. The plurality of rinse cycles may include a first rinse of a semiconductor substrate with de-ionized (DI) water and carbon dioxide (CO2), followed by a second rinse the semiconductor substrate with DI water and CO2. The first rinse has a first resistivity; the second rinse has a second resistivity lower than the first resistivity.
摘要翻译： 描述了用于制造半导体器件的迭代冲洗。 迭代冲洗包括多个漂洗循环，其中多个漂洗循环中的每一个具有不同的电阻率。 多个漂洗循环可以包括具有去离子（DI）水和二氧化碳（CO 2）的半导体衬底的第一次冲洗，随后用DI水和CO 2冲洗半导体衬底。 第一冲洗具有第一电阻率; 第二冲洗具有比第一电阻率低的第二电阻率。
-
公开(公告)号：US08476003B2
公开(公告)日：2013-07-02
申请号：US13044277
申请日：2011-03-09
申请人： Yung-Yao Lee , Wei-Hong Chuang , Li-Shiuan Chen , Ping-Hsi Yang
发明人： Yung-Yao Lee , Wei-Hong Chuang , Li-Shiuan Chen , Ping-Hsi Yang
IPC分类号： G03F7/26
CPC分类号： G03F7/405 , H01L21/0206
摘要： An iterative rinse for fabrication of semiconductor devices is described. The iterative rinse includes a plurality of rinse cycles, wherein each of the plurality of rinse cycles has a different resistivity. The plurality of rinse cycles may include a first rinse of a semiconductor substrate with de-ionized (DI) water and carbon dioxide (CO2), followed by a second rinse the semiconductor substrate with DI water and CO2. The first rinse has a first resistivity; the second rinse has a second resistivity lower than the first resistivity.
摘要翻译： 描述了用于制造半导体器件的迭代冲洗。 迭代冲洗包括多个漂洗循环，其中多个漂洗循环中的每一个具有不同的电阻率。 多个漂洗循环可以包括具有去离子（DI）水和二氧化碳（CO 2）的半导体衬底的第一次冲洗，随后用DI水和CO 2冲洗半导体衬底。 第一冲洗具有第一电阻率; 第二冲洗具有比第一电阻率低的第二电阻率。
-
-
-
搜索结果
4 条记录 (耗时 0.031 秒)
