公开(公告)号：US20160336332A1

公开(公告)日：2016-11-17

申请号：US15110706

申请日：2014-02-11

申请人： Chen-Guan LEE ,  Walid HAFEZ ,  Chia-Hong JAN

发明人： Chen Guan LEE ,  Walid M. HAFEZ ,  Chia Hong JAN

IPC分类号： H01L27/112 ,  H01L23/525

CPC分类号： H01L27/11206 ,  H01L23/5252 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/00

摘要： An antifuse may include a non-planar conductive terminal having a high-z portion extending to a greater z-height than a low-z portion. A second conductive terminal is disposed over the low-z portion and separated from the first terminal by at least one intervening dielectric material. Fabrication of an antifuse may include forming a first opening in a first dielectric material disposed over a substrate, and undercutting a region of the first dielectric material. The undercut region of the first dielectric material is lined with a second dielectric material, such as gate dielectric material, through the first opening. A conductive first terminal material backfills the lined undercut region through the first opening. A second opening through the first dielectric material exposes the second dielectric material lining the undercut region. A conductive second terminal material is backfilled in the second opening.

摘要翻译： 反熔丝可以包括具有延伸到比低z部分更大的z高度的高z部分的非平面导电端子。 第二导电端子设置在低z部分之上并且与第一端子分开由至少一个中间介电材料。 反熔丝的制造可以包括在布置在基板上的第一介电材料中形成第一开口，以及对第一介电材料的区域进行底切。 第一介电材料的底切区域通过第一开口衬有诸如栅极电介质材料的第二介电材料。 导电的第一端子材料通过第一开口填充衬里的底切区域。 穿过第一介电材料的第二开口暴露在底切区域内的第二电介质材料。 导电的第二端子材料在第二开口中被回填。