公开(公告)号：US20140036611A1

公开(公告)日：2014-02-06

申请号：US13563312

申请日：2012-07-31

Applicant: Chih Jen CHEN

Inventor： Chih Jen CHEN

IPC: G05F3/02 ,  G11C5/14

CPC classification number: G11C5/14 ,  G11C5/145 ,  G11C5/146

Abstract: A voltage generating system and a memory device using the same are disclosed. The voltage generating system includes an internal voltage regulator, configured to supply a current to pull an internal supply voltage to a regulated level and maintain at the regulated level; and a substrate-bias controlled selector, configured to receive a regulator power-up mode signal, a regulating mode signal and a substrate-bias voltage of a substrate, and control the internal voltage regulator such that when the substrate-bias voltage is smaller than a predetermined voltage, the internal voltage regulator powers up and operates normally by respectively taking the regulator power-up mode signal and the regulating mode signal into consideration, and when the substrate-bias voltage is larger than or equal to the predetermined voltage, the internal voltage regulator is disabled. The predetermined voltage is smaller than or equal to a forward voltage of a p-n junction formed with the substrate.

Abstract translation: 公开了一种电压产生系统和使用其的存储器件。 电压发生系统包括内部电压调节器，其被配置为提供电流以将内部电源电压拉至调节电平并保持在限制电平; 以及衬底偏置控制选择器，被配置为接收调节器上电模式信号，调节模式信号和衬底的衬底偏置电压，并且控制内部电压调节器，使得当衬底偏置电压小于 内部电压调节器通过分别考虑调节器上电模式信号和调节模式信号来正常启动并正常工作，并且当衬底偏置电压大于或等于预定电压时，内部稳压器内部 电压调节器禁用。 预定电压小于或等于与衬底形成的p-n结的正向电压。