公开(公告)号：US4665277A

公开(公告)日：1987-05-12

申请号：US838648

申请日：1986-03-11

申请人： Chih Sah ,  Li-Jen Cheng

发明人： Chih Sah ,  Li-Jen Cheng

IPC分类号： H01L27/142 ,  H01L31/11 ,  H01L31/06

CPC分类号： H01L31/1105 ,  H01L31/0475 ,  Y02E10/50

摘要： Front surface contact floating emitter solar cell "transistors" having a semiconductor body (n-type) and floating emitter sections (p-type) diffused or implanted in the front surface are provided with sections diffused or implanted in the front surface between the floating emitter sections, but isolated from the floating emitter sections, for use either as a base contact to the n-type semiconductor body, in which case the section is doped n.sup.+, or as a collector for the adjacent emitter sections, in which case the section is doped p.sup.+. In the first case, the structure is provided with p.sup.+ semiconductor material on the back to serve as a collector, and in the second case with n.sup.+ semiconductor material on the back to serve as a base contact. In either case, the semiconductor material on the back may be a starting substrate of suitably doped semiconductor material. In the case of the substrate being the collector, a groove is etched to isolate the collector junctions from saw damage on the edge. Using ion implantation techniques, floating emitter solar cell "transistor" structures may be fabricated in an implanted well (n-type for p-n-p transistors) to obviate the need for a groove.

摘要翻译： 在前表面扩散或注入的具有半导体本体（n型）和浮动发射极部分（p型）的前表面接触浮置发射极太阳能电池“晶体管”设置有扩散或植入在浮置发射极 但是与浮动发射极部分隔离，用作n型半导体本体的基极接触，在这种情况下，该部分被掺杂为n +，或用作相邻发射极部分的集电极，在这种情况下，该部分为 掺杂p +。 在第一种情况下，该结构在背面设置有p +半导体材料以用作集电极，在第二种情况下，在背面具有n +半导体材料以用作基极接触。 在任一情况下，背面的半导体材料可以是适当掺杂的半导体材料的起始衬底。 在基板是集电器的情况下，蚀刻凹槽以将集电器接头与边缘上的锯损坏隔离。 使用离子注入技术，可以在注入阱（p型n-p型晶体管的n型）中制造浮置发射极太阳能电池“晶体管”结构，以消除对凹槽的需要。