Method for generating a signal vibration alert
    1.
    发明授权
    Method for generating a signal vibration alert 有权
    产生信号振动警报的方法

    公开(公告)号:US06720885B1

    公开(公告)日:2004-04-13

    申请号:US09993436

    申请日:2001-11-13

    IPC分类号: G08B2100

    CPC分类号: G05B23/0235

    摘要: The present invention provides a method for signal vibration alert. The method of the present invention recognizes significant substantial swerves and corresponding substantial edge-to-edge differences by eliminating the adverse effect of noise among signals generated by an apparatus. When the frequency of the substantial edge-to-edge differences that exceed an acceptable range of the frequency limit is too large, the method of the present invention automatically generates an alert to indicate aberration in the apparatus such that the monitoring staff is informed and allowed to take necessary measures responding to the aberration.

    摘要翻译: 本发明提供了一种用于信号振动警报的方法。 本发明的方法通过消除由装置产生的信号之间的噪声的不利影响来识别显着的实质性转变和相应的实质边缘到边缘的差异。 当超过频率限制的可接受范围的实质边缘到边缘差的频率太大时,本发明的方法自动产生警报以指示装置中的像差,使得监视人员被通知并被允许 采取必要措施应对畸形。

    Method for forming silicide layer on a silicon surface and its use
    2.
    发明申请
    Method for forming silicide layer on a silicon surface and its use 审中-公开
    在硅表面上形成硅化物层的方法及其用途

    公开(公告)号:US20080081444A1

    公开(公告)日:2008-04-03

    申请号:US11599776

    申请日:2006-11-14

    申请人: Chin-Wen Lee

    发明人: Chin-Wen Lee

    IPC分类号: H01L21/44

    CPC分类号: H01L21/28518

    摘要: A method for forming a silicide layer on a silicon surface is provided. First, inert gas ions are implanted into the silicon surface. Then, a metal layer is formed on the surface and subsequently converted into the suicide layer. Thereby the resistance of the silicide can be reduced and the uniformity can be raised without substantially altering the doping concentration of conductive component(s). Thus, the efficiency of the semiconductor device can be enhanced.

    摘要翻译: 提供了一种在硅表面上形成硅化物层的方法。 首先,将惰性气体离子注入硅表面。 然后,在表面上形成金属层,随后将其转化为硅化物层。 因此,可以减少硅化物的电阻,并且可以提高均匀性而基本上不改变导电组分的掺杂浓度。 因此,可以提高半导体器件的效率。