公开(公告)号：US06261921B1

公开(公告)日：2001-07-17

申请号：US09395110

申请日：1999-09-14

申请人： Ching-Lang Yen ,  Chingfu Lin

发明人： Ching-Lang Yen ,  Chingfu Lin

IPC分类号： H01L2176

CPC分类号： H01L21/76232

摘要： A method of forming a shallow trench isolation structure is described. A mask layer and a photoresist layer with an opening are formed on a substrate in sequence. The photoresist layer serves as an etching mask, and then a portion of the mask layer and a portion of the substrate are etched to form a trench in the substrate. A portion of the photoresist layer is removed, and the opening is in-situ widened. Then, a portion of the mask layer exposed by the widened opening is removed. In addition, a top corner of the trench is rounded after removing the portion of the mask layer. Finally, the trench is filled with an insulation material to form a shallow trench isolation structure.

摘要翻译： 描述形成浅沟槽隔离结构的方法。 依次在基板上形成具有开口的掩模层和光致抗蚀剂层。 光致抗蚀剂层用作蚀刻掩模，然后蚀刻掩模层的一部分和衬底的一部分以在衬底中形成沟槽。 去除光致抗蚀剂层的一部分，并且原位加宽开口。 然后，去除由加宽的开口露出的掩模层的一部分。 此外，在去除掩模层的部分之后，沟槽的顶角是圆形的。 最后，沟槽填充绝缘材料以形成浅沟槽隔离结构。