公开(公告)号：US06531383B1

公开(公告)日：2003-03-11

申请号：US09671946

申请日：2000-09-27

Applicant: Ching-ting Lee

Inventor： Ching-ting Lee

IPC: H01L2128

CPC classification number: H01L33/40 ,  H01L21/28575 ,  H01L33/007 ,  H01S5/32341

Abstract: The invention provides a method for manufacturing a gallium nitride-based III-V group compound semiconductor device, which comprises the following steps: forming a semiconductor stacked structure over a substrate, wherein the semiconductor stacked structure comprises an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; etching the semiconductor stacked structure to expose a part of the n-type semiconductor layer; forming a first electrode on the n-type semiconductor layer, wherein the first electrode comprises an ohmic contact layer, a barrier layer, and a pad layer; performing an annealing process to lower the contact resistance between the first electrode and the n-type semiconductor layer and activate the p-type semiconductor layer at the same time; and forming a second electrode on the p-type semiconductor layer.

Abstract translation: 本发明提供了一种用于制造氮化镓基III-V族化合物半导体器件的方法，其包括以下步骤：在衬底上形成半导体层叠结构，其中半导体堆叠结构包括n型半导体层，活性 层和p型半导体层; 蚀刻所述半导体层叠结构以暴露所述n型半导体层的一部分; 在所述n型半导体层上形成第一电极，其中所述第一电极包括欧姆接触层，阻挡层和焊盘层; 执行退火处理以降低第一电极和n型半导体层之间的接触电阻并同时激活p型半导体层; 以及在所述p型半导体层上形成第二电极。

公开(公告)号：US06486050B1

公开(公告)日：2002-11-26

申请号：US10159302

申请日：2002-05-31

Applicant: Ching-ting Lee

Inventor： Ching-ting Lee

IPC: H01L2128

CPC classification number: H01L21/28575 ,  H01L21/246

Abstract: A method for manufacturing III-nitride semiconductor devices is disclosed. The method employs oxidation and sulfurated treatment to reduce the specific contact resistance between metal and p-type III-nitride semiconductors. The method includes surface treatment of p-type III-nitride semiconductors using (NH4)2Sx solution to remove the native oxide from their surface; evaporating metal layer onto the surface-treated p-type III-nitride semiconductors; and then alloy processing the metals and the p-type III-nitride semiconductor with thermal alloy treatment. The method may further include a pre-oxidation step prior to the sulfurated treatment. In this way, ohmic contact can be formed between the metal layer and the p-type III-nitride semiconductors.

Abstract translation: 公开了一种用于制造III族氮化物半导体器件的方法。 该方法采用氧化和硫化处理来降低金属和p型III族氮化物半导体之间的比接触电阻。 该方法包括使用（NH4）2Sx溶液对p型III族氮化物半导体进行表面处理以从其表面去除天然氧化物; 蒸发金属层到表面处理的p型III族氮化物半导体上; 然后通过热合金处理合金加工金属和p型III族氮化物半导体。 该方法还可以包括在硫化处理之前的预氧化步骤。 以这种方式，可以在金属层和p型III族氮化物半导体之间形成欧姆接触。