Variable threshold trench IGBT with offset emitter contacts
    1.
    发明授权
    Variable threshold trench IGBT with offset emitter contacts 有权
    具有偏置发射极触点的可变阈值沟槽IGBT

    公开(公告)号:US08067797B2

    公开(公告)日:2011-11-29

    申请号:US12252684

    申请日:2008-10-16

    IPC分类号: H01L29/66

    摘要: A trench type IGBT as disclosed herein includes a plurality of channel regions having one threshold voltage for the normal operation of the device and a plurality of channel regions having a threshold voltage higher than the threshold voltage for the normal operation of the device.

    摘要翻译: 本文公开的沟槽型IGBT包括具有用于器件的正常操作的一个阈值电压的多个沟道区域和具有高于用于器件的正常操作的阈值电压的阈值电压的多个沟道区域。

    VARIABLE THRESHOLD TRENCH IGBT WITH OFFSET EMITTER CONTACTS
    2.
    发明申请
    VARIABLE THRESHOLD TRENCH IGBT WITH OFFSET EMITTER CONTACTS 有权
    具有偏差发射器触点的可变阈值TRENCH IGBT

    公开(公告)号:US20090146177A1

    公开(公告)日:2009-06-11

    申请号:US12252684

    申请日:2008-10-16

    IPC分类号: H01L29/739

    摘要: A trench type IGBT as disclosed herein includes a plurality of channel regions having one threshold voltage for the normal operation of the device and a plurality of channel regions having a threshold voltage higher than the threshold voltage for the normal operation of the device.

    摘要翻译: 本文公开的沟槽型IGBT包括具有用于器件的正常操作的一个阈值电压的多个沟道区域和具有高于用于器件的正常操作的阈值电压的阈值电压的多个沟道区域。