Photolithography mask critical dimension metrology system and method
    1.
    发明授权
    Photolithography mask critical dimension metrology system and method 有权
    光刻面具临界尺度计量系统及方法

    公开(公告)号:US07251015B2

    公开(公告)日:2007-07-31

    申请号:US11167776

    申请日:2005-06-27

    Applicant: Chiu-Shan Yoo

    Inventor: Chiu-Shan Yoo

    CPC classification number: G03F7/7085 G03F7/70441 G03F7/70625

    Abstract: A photolithography mask critical dimension metrology system is provided. The system includes a radiation source, a holder operable to securely hold at least one mask oriented to receive radiation emitted from the radiation source, a projection system operable to direct radiation passing through the at least one mask, and an image capture system operable to receive radiation directed by the projection system and capture a projected image of the at least one mask.

    Abstract translation: 提供光刻掩模临界尺寸计量系统。 该系统包括辐射源,保持器,其可操作以牢固地保持定向成接收从辐射源发射的辐射的至少一个掩模,可操作以引导通过至少一个掩模的辐射的投影系统,以及可操作以接收 由投影系统引导的辐射并捕获至少一个掩模的投影图像。

    Photolithography mask critical dimension metrology system and method
    2.
    发明申请
    Photolithography mask critical dimension metrology system and method 有权
    光刻面具临界尺度计量系统及方法

    公开(公告)号:US20060290907A1

    公开(公告)日:2006-12-28

    申请号:US11167776

    申请日:2005-06-27

    Applicant: Chiu-Shan Yoo

    Inventor: Chiu-Shan Yoo

    CPC classification number: G03F7/7085 G03F7/70441 G03F7/70625

    Abstract: A system comprising a radiation source, a holder operable to securely hold at least one mask oriented to receive radiation emitted from the radiation source, a projection system operable to direct radiation passing through the at least one mask, and an image capture system operable to receive radiation directed by the projection system and capture a projected image of the at least one mask.

    Abstract translation: 一种包括辐射源的系统,可操作以可靠地保持定向以接收从所述辐射源发射的辐射的至少一个掩模的保持器,可操作以引导通过所述至少一个掩模的辐射的投影系统,以及可操作以接收 由投影系统引导的辐射并捕获至少一个掩模的投影图像。

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