Method and system for measuring laser induced phenomena changes in a semiconductor device
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    发明申请
    Method and system for measuring laser induced phenomena changes in a semiconductor device 有权
    用于测量半导体器件中的激光诱发现象变化的方法和系统

    公开(公告)号:US20060284625A1

    公开(公告)日:2006-12-21

    申请号:US11158945

    申请日:2005-06-21

    IPC分类号: G01R27/08

    CPC分类号: G01R31/311 G01R17/105

    摘要: A method and system for measuring laser induced phenomena changes of at least one of a resistance, a capacitance and an inductance in a semiconductor device. The method comprises interconnecting an electrical bridge circuit across the semiconductor device, the semiconductor device being connected as one of at least four circuit elements of the bridge circuit; inducing the changes in the semiconductor; and monitoring a balance condition of the bridge circuit.

    摘要翻译: 一种用于测量半导体器件中的电阻,电容和电感中的至少一个的激光感应现象变化的方法和系统。 该方法包括跨越半导体器件互连电桥电路,该半导体器件被连接为桥接电路的至少四个电路元件之一; 引起半导体的变化; 并监测桥接电路的平衡状态。