Memory cell and memory device using the same
    1.
    发明授权
    Memory cell and memory device using the same 有权
    内存单元和内存设备使用相同

    公开(公告)号:US08493768B2

    公开(公告)日:2013-07-23

    申请号:US13300688

    申请日:2011-11-21

    IPC分类号: G11C11/22

    CPC分类号: G11C11/22

    摘要: Provided is a memory cell including: a ferroelectric transistor; a plurality of switching elements electrically connected to the ferroelectric transistor; and a plurality of control lines for transmitting individual control signals to each of the plurality of switching element for separately controlling the plurality of switching elements. The plurality of switching elements are configured to be separately controlled on the basis of the individual control signals so as to prevent each electrode of the ferroelectric transistor from being floated.

    摘要翻译: 提供一种存储单元,包括:铁电晶体管; 电连接到所述铁电晶体管的多个开关元件; 以及多个控制线,用于将各个控制信号发送到多个开关元件中的每一个,用于分别控制多个开关元件。 多个开关元件被配置为基于各个控制信号单独控制,以防止铁电晶体管的每个电极浮动。

    MEMORY CELL AND MEMORY DEVICE USING THE SAME
    2.
    发明申请
    MEMORY CELL AND MEMORY DEVICE USING THE SAME 有权
    使用该存储单元的存储单元和存储器件

    公开(公告)号:US20120134197A1

    公开(公告)日:2012-05-31

    申请号:US13300688

    申请日:2011-11-21

    IPC分类号: G11C11/22

    CPC分类号: G11C11/22

    摘要: Provided is a memory cell including: a ferroelectric transistor; a plurality of switching elements electrically connected to the ferroelectric transistor; and a plurality of control lines for transmitting individual control signals to each of the plurality of switching element for separately controlling the plurality of switching elements. The plurality of switching elements are configured to be separately controlled on the basis of the individual control signals so as to prevent each electrode of the ferroelectric transistor from being floated.

    摘要翻译: 提供一种存储单元,包括:铁电晶体管; 电连接到所述铁电晶体管的多个开关元件; 以及多个控制线,用于将各个控制信号发送到多个开关元件中的每一个,用于分别控制多个开关元件。 多个开关元件被配置为基于各个控制信号单独控制,以防止铁电晶体管的每个电极浮动。