公开(公告)号：US07915674B2

公开(公告)日：2011-03-29

申请号：US12133388

申请日：2008-06-05

申请人： Chyh-Yih Chang ,  Hsing-Hua Sun ,  Tsuan-Lun Lung ,  Chen-Ming Chiu

发明人： Chyh-Yih Chang ,  Hsing-Hua Sun ,  Tsuan-Lun Lung ,  Chen-Ming Chiu

IPC分类号： H01L29/66

CPC分类号： H01L29/7817 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/1095

摘要： An exemplary lateral diffused metal oxide semiconductor device includes a first-type substrate, a gate oxide film disposed on the first-type substrate, a poly gate disposed on the gate oxide film, a first second-type slightly doped region formed in the first-type substrate and acting as a well, a first first-type highly doped region formed in the well and acting as a body, a first second-type highly doped region formed in the body and acting as a source, a second second-type highly doped region formed in the well and acting as a drain, a second first-type highly doped region formed in the body, and a first first-type doped region formed in the body and is beneath the source.

摘要翻译： 示例性的横向扩散金属氧化物半导体器件包括第一类型衬底，设置在第一类型衬底上的栅极氧化膜，设置在栅极氧化物膜上的多晶硅栅极，形成在第一衬底中的第一第二类型轻掺杂区域， 形成在阱中并用作体的第一第一第一高掺杂区域，形成在体内并作为源的第一第二第二类型高掺杂区域，第二第二高度掺杂区域 掺杂区域形成在阱中并用作漏极，形成在体内的第二第一第一高掺杂区域和形成在体内并位于源极之下的第一第一掺杂区域。