Dielectrophoretic columnar focusing device
    2.
    发明授权
    Dielectrophoretic columnar focusing device 有权
    介电泳柱状聚焦装置

    公开(公告)号:US07713395B1

    公开(公告)日:2010-05-11

    申请号:US11401714

    申请日:2006-04-11

    IPC分类号: G01N27/453

    CPC分类号: B03C5/026

    摘要: A dielectrophoretic columnar focusing device uses interdigitated microelectrodes to provide a spatially non-uniform electric field in a fluid that generates a dipole within particles in the fluid. The electric field causes the particles to either be attracted to or repelled from regions where the electric field gradient is large, depending on whether the particles are more or less polarizable than the fluid. The particles can thereby be forced into well defined stable paths along the interdigitated microelectrodes. The device can be used for flow cytometry, particle control, and other process applications, including cell counting or other types of particle counting, and for separations in material control.

    摘要翻译: 介电电泳柱状聚焦装置使用交叉指向的微电极在流体中的颗粒内产生偶极子的流体中提供空间不均匀的电场。 电场导致颗粒被电场梯度大的区域吸引或排斥,这取决于颗粒是否比流体多或少极化。 因此,颗粒可以沿着交叉指示的微电极被强制进入明确定义的稳定路径。 该装置可用于流式细胞术,粒子控制和其他过程应用,包括细胞计数或其他类型的颗粒计数,以及材料控制中的分离。

    Ion chamber based neutron detectors
    3.
    发明授权
    Ion chamber based neutron detectors 有权
    基于离子室的中子探测器

    公开(公告)号:US08912502B2

    公开(公告)日:2014-12-16

    申请号:US13559370

    申请日:2012-07-26

    IPC分类号: G01T3/00 H01J47/02

    CPC分类号: G01T3/008 G01T3/00 H01J47/02

    摘要: A neutron detector with monolithically integrated readout circuitry, including: a bonded semiconductor die; an ion chamber formed in the bonded semiconductor die; a first electrode and a second electrode formed in the ion chamber; a neutron absorbing material filling the ion chamber; and the readout circuitry which is electrically coupled to the first and second electrodes. The bonded semiconductor die includes an etched semiconductor substrate bonded to an active semiconductor substrate. The readout circuitry is formed in a portion of the active semiconductor substrate. The ion chamber has a substantially planar first surface on which the first electrode is formed and a substantially planar second surface, parallel to the first surface, on which the second electrode is formed. The distance between the first electrode and the second electrode may be equal to or less than the 50% attenuation length for neutrons in the neutron absorbing material filling the ion chamber.

    摘要翻译: 一种具有单片集成读出电路的中子检测器,包括:键合半导体管芯; 形成在所述键合半导体管芯中的离子室; 形成在所述离子室中的第一电极和第二电极; 填充离子室的中子吸收材料; 以及电耦合到第一和第二电极的读出电路。 键合的半导体管芯包括结合到有源半导体衬底的蚀刻半导体衬底。 读出电路形成在有源半导体衬底的一部分中。 离子室具有基本上平面的第一表面,第一电极形成在其上,并且平行于第一表面的基本平坦的第二表面,在其上形成第二电极。 第一电极和第二电极之间的距离可以等于或小于填充离子室的中子吸收材料中的中子的50%衰减长度。

    ION CHAMBER BASED NEUTRON DETECTORS
    4.
    发明申请
    ION CHAMBER BASED NEUTRON DETECTORS 有权
    基于离子室的中子探测器

    公开(公告)号:US20130020492A1

    公开(公告)日:2013-01-24

    申请号:US13559370

    申请日:2012-07-26

    IPC分类号: G01T3/00

    CPC分类号: G01T3/008 G01T3/00 H01J47/02

    摘要: A neutron detector with monolithically integrated readout circuitry, including: a bonded semiconductor die; an ion chamber formed in the bonded semiconductor die; a first electrode and a second electrode formed in the ion chamber; a neutron absorbing material filling the ion chamber; and the readout circuitry which is electrically coupled to the first and second electrodes. The bonded semiconductor die includes an etched semiconductor substrate bonded to an active semiconductor substrate. The readout circuitry is formed in a portion of the active semiconductor substrate. The ion chamber has a substantially planar first surface on which the first electrode is formed and a substantially planar second surface, parallel to the first surface, on which the second electrode is formed. Desirably, the distance between the first electrode and the second electrode may be equal to or less than the 50% attenuation length for neutrons in the neutron absorbing material filling the ion chamber.

    摘要翻译: 一种具有单片集成读出电路的中子检测器,包括:键合半导体管芯; 形成在所述键合半导体管芯中的离子室; 形成在所述离子室中的第一电极和第二电极; 填充离子室的中子吸收材料; 以及电耦合到第一和第二电极的读出电路。 键合的半导体管芯包括结合到有源半导体衬底的蚀刻半导体衬底。 读出电路形成在有源半导体衬底的一部分中。 离子室具有基本上平面的第一表面,第一电极形成在其上,并且平行于第一表面的基本平坦的第二表面,在其上形成第二电极。 理想地,第一电极和第二电极之间的距离可以等于或小于填充离子室的中子吸收材料中的中子的50%的衰减长度。