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公开(公告)号:US12204091B2
公开(公告)日:2025-01-21
申请号:US17621732
申请日:2020-06-24
Applicant: Corning Incorporated
Inventor: Jerome René Broutin , Benjamin Jean-Baptiste Francois Burger , Aude Contet , Géraldine Denise Juliette Malet-Vasseur , Nicolas Gilbert Jose Samper
Abstract: Electrowetting optical devices can comprise a first electrode at least partially circumscribing a first optical window and a second electrode at least partially circumscribing a second optical window. The second optical window may be aligned with the first optical window in a direction of the optical axis. A central region may be defined by a projection of a footprint of the second optical window. An interface between a first liquid and a second liquid that may be disposed within a containment region may form a lens. In some embodiments, a thickness of a second dielectric portion at least partially circumscribing the central region may be greater than a thickness of a thirst dielectric portion within the central region. In some embodiments, a capacitance per area of the device upon application of a maximum operating voltage may be in a range from about 0.1 pF/mm2 to about 3.5 pF/mm2.
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公开(公告)号:US20220252861A1
公开(公告)日:2022-08-11
申请号:US17621732
申请日:2020-06-24
Applicant: Corning Incorporated
Inventor: Jerome René Broutin , Benjamin Jean-Baptiste Francois Burger , Aude Contet , Géraldine Denise Juliette Malet-Vasseur , Nicolas Gilbert Jose Samper
Abstract: Electrowetting optical devices can comprise a first electrode at least partially circumscribing a first optical window and a second electrode at least partially circumscribing a second optical window. The second optical window may be aligned with the first optical window in a direction of the optical axis. A central region may be defined by a projection of a footprint of the second optical window. An interface between a first liquid and a second liquid that may be disposed within a containment region may form a lens. In some embodiments, a thickness of a second dielectric portion at least partially circumscribing the central region may be greater than a thickness of a thirst dielectric portion within the central region. In some embodiments, a capacitance per area of the device upon application of a maximum operating voltage may be in a range from about 0.1 pF/mm2 to about 3.5 pF/mm2.
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