公开(公告)号：US20180062075A1

公开(公告)日：2018-03-01

申请号：US15676231

申请日：2017-08-14

Applicant: Crossbar, Inc.

Inventor： Sung Hyun Jo ,  Xianliang Liu ,  Xu Zhao ,  Zeying Ren ,  FNU Atiquzzaman ,  Joanna Bettinger ,  Fengchiao Joyce Lin

IPC: H01L45/00 ,  H01L27/24

CPC classification number: H01L45/146 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/145

Abstract: Providing for a two-terminal memory cell having intrinsic current limiting characteristic is described herein. By way of example, the two-terminal memory cell can comprise a particle donor layer having a moderate resistivity, comprised of unstable or partially unstable metal compounds. The metal compounds can be selected to release metal atoms in response to an external stimulus (e.g., an electric field, a voltage, a current, heat, etc.) into an electrically-resistive switching medium, which is at least in part permeable to drift or diffusion of the metal atoms. The metal atoms form a thin filament through the switching medium, switching the memory cell to a conductive state. The moderate resistivity of the particle donor layer in conjunction with the thin filament can result in an intrinsic resistance to current through the memory cell at voltages above a restriction voltage, protecting the memory cell from excessive current.

公开(公告)号：US20160225824A1

公开(公告)日：2016-08-04

申请号：US15012530

申请日：2016-02-01

Applicant: Crossbar, Inc.

Inventor： Sung Hyun Jo ,  Xianliang Liu ,  Xu Zhao ,  Zeying Ren ,  FNU Atiquzzaman ,  Joanna Bettinger ,  Fengchiao Joyce Lin

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L45/146 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/145

Abstract: Providing for a two-terminal memory cell having intrinsic current limiting characteristic is described herein. By way of example, the two-terminal memory cell can comprise a particle donor layer having a moderate resistivity, comprised of unstable or partially unstable metal compounds. The metal compounds can be selected to release metal atoms in response to an external stimulus (e.g., an electric field, a voltage, a current, heat, etc.) into an electrically-resistive switching medium, which is at least in part permeable to drift or diffusion of the metal atoms. The metal atoms form a thin filament through the switching medium, switching the memory cell to a conductive state. The moderate resistivity of the particle donor layer in conjunction with the thin filament can result in an intrinsic resistance to current through the memory cell at voltages above a restriction voltage, protecting the memory cell from excessive current.

Abstract translation: 本文描述了提供具有固有限流特性的双端存储单元。 作为示例，双末端存储器单元可以包括具有中等电阻率的颗粒供体层，其由不稳定或部分不稳定的金属化合物组成。 可以选择金属化合物以响应外部刺激（例如，电场，电压，电流，热等）将金属原子释放到电阻式开关介质中，该电阻开关介质至少部分可渗透 金属原子的漂移或扩散。 金属原子通过开关介质形成细长丝，将存储单元切换到导电状态。 结合细丝的粒子施主层的中等电阻率可导致在高于限制电压的电压下通过存储器单元的电流的固有电阻，从而保护存储器单元免于过大的电流。

公开(公告)号：US10608180B2

公开(公告)日：2020-03-31

申请号：US15676231

申请日：2017-08-14

Applicant: Crossbar, Inc.

Inventor： Sung Hyun Jo ,  Xianliang Liu ,  Xu Zhao ,  Zeying Ren ,  FNU Atiquzzaman ,  Joanna Bettinger ,  Fengchiao Joyce Lin

IPC: H01L27/24 ,  H01L45/00

Abstract: Providing for a two-terminal memory cell having intrinsic current limiting characteristic is described herein. By way of example, the two-terminal memory cell can comprise a particle donor layer having a moderate resistivity, comprised of unstable or partially unstable metal compounds. The metal compounds can be selected to release metal atoms in response to an external stimulus (e.g., an electric field, a voltage, a current, heat, etc.) into an electrically-resistive switching medium, which is at least in part permeable to drift or diffusion of the metal atoms. The metal atoms form a thin filament through the switching medium, switching the memory cell to a conductive state. The moderate resistivity of the particle donor layer in conjunction with the thin filament can result in an intrinsic resistance to current through the memory cell at voltages above a restriction voltage, protecting the memory cell from excessive current.

公开(公告)号：US10134984B1

公开(公告)日：2018-11-20

申请号：US14587644

申请日：2014-12-31

Applicant: Crossbar, Inc.

Inventor： Sung Hyun Jo ,  Joanna Bettinger ,  Xianliang Liu ,  Zeying Ren ,  Xu Zhao ,  Fnu Atiquzzaman

IPC: H01L45/00

Abstract: Providing an electrode for a two-terminal memory device is described herein. By way of example, the electrode can comprise a contact surface that comprises at least one surface discontinuity. For instance, the electrode can have a gap, break, or other discontinuous portion of a surface that makes electrical contact with another component of the two-terminal memory device. In one example, the contact surface can comprise an annulus or an approximation of an annulus, having a discontinuity within a center of the annulus, for instance. In some embodiments, a disclosed electrode can be formed from a conductive layer deposited over a non-continuous surface formed by a via or trench in an insulator, or over a pillar device formed from or on the insulator.

公开(公告)号：US09735357B2

公开(公告)日：2017-08-15

申请号：US15012530

申请日：2016-02-01

Applicant: Crossbar, Inc.

Inventor： Sung Hyun Jo ,  Xianliang Liu ,  Xu Zhao ,  Zeying Ren ,  Fnu Atiquzzaman ,  Joanna Bettinger ,  Fengchiao Joyce Lin

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L45/146 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/145

Abstract: Providing for a two-terminal memory cell having intrinsic current limiting characteristic is described herein. By way of example, the two-terminal memory cell can comprise a particle donor layer having a moderate resistivity, comprised of unstable or partially unstable metal compounds. The metal compounds can be selected to release metal atoms in response to an external stimulus (e.g., an electric field, a voltage, a current, heat, etc.) into an electrically-resistive switching medium, which is at least in part permeable to drift or diffusion of the metal atoms. The metal atoms form a thin filament through the switching medium, switching the memory cell to a conductive state. The moderate resistivity of the particle donor layer in conjunction with the thin filament can result in an intrinsic resistance to current through the memory cell at voltages above a restriction voltage, protecting the memory cell from excessive current.