公开(公告)号：US20170350036A1

公开(公告)日：2017-12-07

申请号：US15685127

申请日：2017-08-24

申请人： CRYSTAL IS, INC.

发明人： Robert T. Bondokov ,  Leo J. Schowalter ,  Kenneth Morgan ,  Glen A. Slack ,  Shailaja P. Rao ,  Shawn Robert Gibb

IPC分类号： C30B23/02 ,  C30B23/00 ,  C30B29/40

CPC分类号： C30B23/025 ,  C30B23/00 ,  C30B29/403 ,  Y10T428/2982

摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

公开(公告)号：US10392722B2

公开(公告)日：2019-08-27

申请号：US15685127

申请日：2017-08-24

申请人： CRYSTAL IS, INC.

发明人： Robert T. Bondokov ,  Leo J. Schowalter ,  Kenneth Morgan ,  Glen A. Slack ,  Shailaja P. Rao ,  Shawn Robert Gibb

IPC分类号： C30B25/02 ,  C30B23/02 ,  C30B29/40 ,  C30B23/00

摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ≤100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

公开(公告)号：US09771666B2

公开(公告)日：2017-09-26

申请号：US14684754

申请日：2015-04-13

申请人： Crystal IS, Inc.

发明人： Robert T. Bondokov ,  Leo J. Schowalter ,  Kenneth Morgan ,  Glen A. Slack ,  Shailaja P. Rao ,  Shawn Robert Gibb

IPC分类号： C30B23/00 ,  C30B23/02 ,  C30B29/40

CPC分类号： C30B23/025 ,  C30B23/00 ,  C30B29/403 ,  Y10T428/2982

摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

公开(公告)号：US11015263B2

公开(公告)日：2021-05-25

申请号：US16505840

申请日：2019-07-09

申请人： CRYSTAL IS, INC.

发明人： Robert T. Bondokov ,  Leo J. Schowalter ,  Kenneth Morgan ,  Glen A. Slack ,  Shailaja P. Rao ,  Shawn Robert Gibb

IPC分类号： C30B25/02 ,  C30B23/02 ,  C30B29/40 ,  C30B23/00

摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≤100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

公开(公告)号：US20200002841A1

公开(公告)日：2020-01-02

申请号：US16505840

申请日：2019-07-09

申请人： CRYSTAL IS, INC.

发明人： Robert T. Bondokov ,  Leo J. Schowalter ,  Kenneth Morgan ,  Glen A. Slack ,  Shailaja P. Rao ,  Shawn Robert Gibb

IPC分类号： C30B23/02 ,  C30B29/40 ,  C30B23/00

摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≤100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.